GaAs/AlGaAs quantum cascade lasers

S Hofling*, JP Reithmaier, A Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Quantum cascade lasers for the 10 mu m spectral region were fabricated. With the goal of miniaturization, improvement of device properties, and single mode emission, we have developed lasers with one-dimensional photonic crystals by deeply etched Bragg-mirrors. For the first time nearly lattice matched GaInNAs was successfully grown on GaAs substrates at 590 degrees C, which allows an increase in the carrier confinement.

Original languageUndefined/Unknown
Pages (from-to)366-373
Number of pages8
JournalTm-Technisches messen
Volume72
Issue number6
Publication statusPublished - Jun 2005

Keywords

  • quantum-cascade laser
  • microlaser
  • distributed Bragg-reflector
  • infrared
  • gas sensing
  • dilute nitrides
  • CONTINUOUS-WAVE OPERATION
  • ROOM-TEMPERATURE OPERATION
  • MU-M
  • SEMICONDUCTOR
  • SUPERLATTICE

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