Full control of polarization in ferroelectric thin films using growth temperature to modulate defects

Christian Weymann; Céline Lichtensteiger; Stéphanie Fernandez-Peña; Aaron B. Naden; Liv R. Dedon; Lane W. Martin; Jean-Marc Triscone; Patrycja Paruch

doi:10.1002/aelm.202000852

Full control of polarization in ferroelectric thin films using growth temperature to modulate defects

Christian Weymann, Céline Lichtensteiger, Stéphanie Fernandez-Peña, Aaron B. Naden, Liv R. Dedon, Lane W. Martin, Jean-Marc Triscone, Patrycja Paruch

School of Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

Deterministic control of the intrinsic polarization state of ferroelectric thin films is essential for device applications. Independently of the well-established role of electrostatic boundary conditions and epitaxial strain, the importance of growth temperature as a tool to stabilize a target polarization state during thin film growth is shown here. Full control of the intrinsic polarization orientation of PbTiO₃ thin films is demonstrated-from monodomain up, through polydomain, to monodomain down as imaged by piezoresponse force microscopy-using changes in the film growth temperature. X-ray diffraction and scanning transmission electron microscopy reveal a variation of c-axis related to out-of-plane strain gradients. These measurements, supported by Ginzburg-Landau-Devonshire free energy calculations and Rutherford backscattering spectroscopy, point to a defect mediated polarization gradient initiated by a temperature dependent effective built-in field during growth, allowing polarization control not only under specific growth conditions, but ex-situ, for subsequent processing and device applications.

Original language	English
Article number	2000852
Number of pages	9
Journal	Advanced Electronic Materials
Volume	Early View
DOIs	https://doi.org/10.1002/aelm.202000852
Publication status	E-pub ahead of print - 27 Oct 2020

Keywords

Built-in voltage
Defect dipoles
Ferroelectric thin films
Lead titanate
Polarization control

Access to Document

10.1002/aelm.202000852Licence: CC BY-NC-ND

Weymann_2020_AEM_Full-control_CC
Copyright © 2020 The Authors published by Wiley-VCH GmbH, Weinheim. This is an open access article under the terms of the Creative Commons Attribution‐NonCommercial‐NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non‐commercial and no modifications or adaptations are made.
Final published version, 1.8 MBLicence: CC BY-NC-ND

Electon Microscopy: Electon Microscopy for the characterisation and manipulation of advanced function materials and their interfaces at the nanoscale
Irvine, J. T. S. (PI), Baker, R. (CoI) & Zhou, W. (CoI)
EPSRC
1/04/18 → 2/09/20
Project: Standard
Equipment Account: Characterisation and Manipulation of Advanced Functional Materials and their Interfaces at the Nanoscale
Samuel, I. D. W. (PI)
EPSRC
1/10/13 → 30/09/23
Project: Standard

Cite this

@article{a8d8ce28718d41e1a2b840a5bba95111,

title = "Full control of polarization in ferroelectric thin films using growth temperature to modulate defects",

abstract = "Deterministic control of the intrinsic polarization state of ferroelectric thin films is essential for device applications. Independently of the well-established role of electrostatic boundary conditions and epitaxial strain, the importance of growth temperature as a tool to stabilize a target polarization state during thin film growth is shown here. Full control of the intrinsic polarization orientation of PbTiO3 thin films is demonstrated-from monodomain up, through polydomain, to monodomain down as imaged by piezoresponse force microscopy-using changes in the film growth temperature. X-ray diffraction and scanning transmission electron microscopy reveal a variation of c-axis related to out-of-plane strain gradients. These measurements, supported by Ginzburg-Landau-Devonshire free energy calculations and Rutherford backscattering spectroscopy, point to a defect mediated polarization gradient initiated by a temperature dependent effective built-in field during growth, allowing polarization control not only under specific growth conditions, but ex-situ, for subsequent processing and device applications.",

keywords = "Built-in voltage, Defect dipoles, Ferroelectric thin films, Lead titanate, Polarization control",

author = "Christian Weymann and C{\'e}line Lichtensteiger and St{\'e}phanie Fernandez-Pe{\~n}a and Naden, {Aaron B.} and Dedon, {Liv R.} and Martin, {Lane W.} and Jean-Marc Triscone and Patrycja Paruch",

note = "P.P. and C.W. acknowledge partial support by Swiss National Science Foundation Division II grant 200021_178782. L.R.D. acknowledges support from the US National Science Foundation under grant DMR‐1708615. L.W.M. acknowledges support from the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Contract No. DE‐AC02‐05‐CH11231 (Materials Project program KC23MP) for the growth and study of defect structures in ferroic materials. A.B.N. gratefully acknowledges support from the Engineering and Physics Sciences Research Council (EPSRC) through grants EP/R023751/1 and EP/L017008/1.",

year = "2020",

month = oct,

day = "27",

doi = "10.1002/aelm.202000852",

language = "English",

volume = "Early View",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "John Wiley & Sons, Ltd",

}

TY - JOUR

T1 - Full control of polarization in ferroelectric thin films using growth temperature to modulate defects

AU - Weymann, Christian

AU - Lichtensteiger, Céline

AU - Fernandez-Peña, Stéphanie

AU - Naden, Aaron B.

AU - Dedon, Liv R.

AU - Martin, Lane W.

AU - Triscone, Jean-Marc

AU - Paruch, Patrycja

N1 - P.P. and C.W. acknowledge partial support by Swiss National Science Foundation Division II grant 200021_178782. L.R.D. acknowledges support from the US National Science Foundation under grant DMR‐1708615. L.W.M. acknowledges support from the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Contract No. DE‐AC02‐05‐CH11231 (Materials Project program KC23MP) for the growth and study of defect structures in ferroic materials. A.B.N. gratefully acknowledges support from the Engineering and Physics Sciences Research Council (EPSRC) through grants EP/R023751/1 and EP/L017008/1.

PY - 2020/10/27

Y1 - 2020/10/27

N2 - Deterministic control of the intrinsic polarization state of ferroelectric thin films is essential for device applications. Independently of the well-established role of electrostatic boundary conditions and epitaxial strain, the importance of growth temperature as a tool to stabilize a target polarization state during thin film growth is shown here. Full control of the intrinsic polarization orientation of PbTiO3 thin films is demonstrated-from monodomain up, through polydomain, to monodomain down as imaged by piezoresponse force microscopy-using changes in the film growth temperature. X-ray diffraction and scanning transmission electron microscopy reveal a variation of c-axis related to out-of-plane strain gradients. These measurements, supported by Ginzburg-Landau-Devonshire free energy calculations and Rutherford backscattering spectroscopy, point to a defect mediated polarization gradient initiated by a temperature dependent effective built-in field during growth, allowing polarization control not only under specific growth conditions, but ex-situ, for subsequent processing and device applications.

AB - Deterministic control of the intrinsic polarization state of ferroelectric thin films is essential for device applications. Independently of the well-established role of electrostatic boundary conditions and epitaxial strain, the importance of growth temperature as a tool to stabilize a target polarization state during thin film growth is shown here. Full control of the intrinsic polarization orientation of PbTiO3 thin films is demonstrated-from monodomain up, through polydomain, to monodomain down as imaged by piezoresponse force microscopy-using changes in the film growth temperature. X-ray diffraction and scanning transmission electron microscopy reveal a variation of c-axis related to out-of-plane strain gradients. These measurements, supported by Ginzburg-Landau-Devonshire free energy calculations and Rutherford backscattering spectroscopy, point to a defect mediated polarization gradient initiated by a temperature dependent effective built-in field during growth, allowing polarization control not only under specific growth conditions, but ex-situ, for subsequent processing and device applications.

KW - Built-in voltage

KW - Defect dipoles

KW - Ferroelectric thin films

KW - Lead titanate

KW - Polarization control

U2 - 10.1002/aelm.202000852

DO - 10.1002/aelm.202000852

M3 - Article

SN - 2199-160X

VL - Early View

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

M1 - 2000852

ER -

Full control of polarization in ferroelectric thin films using growth temperature to modulate defects

Abstract

Keywords

Access to Document

Fingerprint

Projects

Electon Microscopy: Electon Microscopy for the characterisation and manipulation of advanced function materials and their interfaces at the nanoscale

Equipment Account: Characterisation and Manipulation of Advanced Functional Materials and their Interfaces at the Nanoscale

Cite this