Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

Marcin Motyka; Grzegorz Sek; Jan Misiewicz; Adam Bauer; Matthias Dallner; Sven Höfling; Alfred Forchel

doi:10.1143/APEX.2.126505

Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

Marcin Motyka^*, Grzegorz Sek, Jan Misiewicz, Adam Bauer, Matthias Dallner, Sven Höfling, Alfred Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type 11 quantum wells (QWs) ranging up to almost 5 mu m. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb "W"-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.126505

Original language	English
Article number	126505
Number of pages	3
Journal	Applied Physics Express
Volume	2
Issue number	12
DOIs	https://doi.org/10.1143/APEX.2.126505
Publication status	Published - Dec 2009

Keywords

TRANSITIONS

Access to Document

10.1143/APEX.2.126505

Cite this

@article{fe0960ba93b54e41a78e3a24e45c5c71,

title = "Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells",

abstract = "Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type 11 quantum wells (QWs) ranging up to almost 5 mu m. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb {"}W{"}-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.126505",

keywords = "TRANSITIONS",

author = "Marcin Motyka and Grzegorz Sek and Jan Misiewicz and Adam Bauer and Matthias Dallner and Sven H{\"o}fling and Alfred Forchel",

year = "2009",

month = dec,

doi = "10.1143/APEX.2.126505",

language = "English",

volume = "2",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "12",

}

TY - JOUR

T1 - Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

AU - Motyka, Marcin

AU - Sek, Grzegorz

AU - Misiewicz, Jan

AU - Bauer, Adam

AU - Dallner, Matthias

AU - Höfling, Sven

AU - Forchel, Alfred

PY - 2009/12

Y1 - 2009/12

N2 - Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type 11 quantum wells (QWs) ranging up to almost 5 mu m. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb "W"-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.126505

AB - Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type 11 quantum wells (QWs) ranging up to almost 5 mu m. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb "W"-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.126505

KW - TRANSITIONS

UR - https://www.scopus.com/pages/publications/73149096979

U2 - 10.1143/APEX.2.126505

DO - 10.1143/APEX.2.126505

M3 - Article

SN - 1882-0778

VL - 2

JO - Applied Physics Express

JF - Applied Physics Express

IS - 12

M1 - 126505

ER -

Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this