Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

Marcin Motyka; Grzegorz Sek; Jan Misiewicz; Adam Bauer; Matthias Dallner; Sven Höfling; Alfred Forchel

doi:10.1143/APEX.2.126505

Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

Marcin Motyka^*, Grzegorz Sek, Jan Misiewicz, Adam Bauer, Matthias Dallner, Sven Höfling, Alfred Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type 11 quantum wells (QWs) ranging up to almost 5 mu m. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb "W"-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.126505

Original language	English
Article number	126505
Number of pages	3
Journal	Applied Physics Express
Volume	2
Issue number	12
DOIs	https://doi.org/10.1143/APEX.2.126505
Publication status	Published - Dec 2009

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10.1143/APEX.2.126505

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abstract = "Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type 11 quantum wells (QWs) ranging up to almost 5 mu m. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb {"}W{"}-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.126505",

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T1 - Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

AU - Motyka, Marcin

AU - Sek, Grzegorz

AU - Misiewicz, Jan

AU - Bauer, Adam

AU - Dallner, Matthias

AU - Höfling, Sven

AU - Forchel, Alfred

PY - 2009/12

Y1 - 2009/12

N2 - Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type 11 quantum wells (QWs) ranging up to almost 5 mu m. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb "W"-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.126505

AB - Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type 11 quantum wells (QWs) ranging up to almost 5 mu m. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb "W"-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.126505

KW - TRANSITIONS

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DO - 10.1143/APEX.2.126505

M3 - Article

SN - 1882-0778

VL - 2

JO - Applied Physics Express

JF - Applied Physics Express

IS - 12

M1 - 126505

ER -

Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

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