Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

Marcin Motyka*, Grzegorz Sek, Jan Misiewicz, Adam Bauer, Matthias Dallner, Sven Höfling, Alfred Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

Fourier-transformed photoreflectance and photoluminescence have been used to study the optical transitions in type 11 quantum wells (QWs) ranging up to almost 5 mu m. High signal-to-noise ratio spectral features resulting from fundamental and excited state transitions have been detected for molecular beam epitaxially grown GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb "W"-shaped QW structures designed for laser-based gas sensing applications in the mid-infrared. The spectral features' dependence on arsenic pressure during growth process and on InAs confining-layer thickness could be followed unambiguously at room temperature. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.126505

Original languageEnglish
Article number126505
Number of pages3
JournalApplied Physics Express
Volume2
Issue number12
DOIs
Publication statusPublished - Dec 2009

Keywords

  • TRANSITIONS

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