Ferroelectric thin-film devices: Failure mechanisms and new prototype nano-structures

J. F. Scott, F. D. Morrison, Y. K. Hoo, A. D. Mlliken, H. J. Fan, S. Kawasaki, M. Miyake, T. Tatsuta, O. Tsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Several fundamental physics problems concerning ferroelectric thin films are discussed with direct application to industry problems. The first is a model of dielectric breakdown under d.c. voltage stressing, extended from single capacitor films to multilayer capacitors (MLCs). The second is an analysis of flash-over (arcing) breakdown in MLCs, including those with base metal electrodes (Ni). The third is the demonstration that any equivalent circuit model for real ferroelectric memories (FRAMs) must include a constant phase element (CPE). We then consider novel new prototype devices with industry potential for commercialization: three-dimensional [3D] DRAM capacitor trenches; piezoelectric nanotubes; and carbon nano-wire arrays with ferroelectric tips.

Original languageEnglish
Title of host publication2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2
Place of PublicationNEW YORK
PublisherIEEE
Pages58
Number of pages4
ISBN (Print)978-1-4244-1333-1
Publication statusPublished - 2007
Event16th IEEE International Symposium on Applications of Ferroelectrics - Nara
Duration: 27 May 200731 May 2007

Conference

Conference16th IEEE International Symposium on Applications of Ferroelectrics
CityNara
Period27/05/0731/05/07

Keywords

  • SURFACE FLASHOVER
  • INSULATORS
  • VACUUM

Fingerprint

Dive into the research topics of 'Ferroelectric thin-film devices: Failure mechanisms and new prototype nano-structures'. Together they form a unique fingerprint.

Cite this