Projects per year
Abstract
Several fundamental physics problems concerning ferroelectric thin films are discussed with direct application to industry problems. The first is a model of dielectric breakdown under d.c. voltage stressing, extended from single capacitor films to multilayer capacitors (MLCs). The second is an analysis of flash-over (arcing) breakdown in MLCs, including those with base metal electrodes (Ni). The third is the demonstration that any equivalent circuit model for real ferroelectric memories (FRAMs) must include a constant phase element (CPE). We then consider novel new prototype devices with industry potential for commercialization: three-dimensional [3D] DRAM capacitor trenches; piezoelectric nanotubes; and carbon nano-wire arrays with ferroelectric tips.
Original language | English |
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Pages (from-to) | 3-9 |
Number of pages | 7 |
Journal | Ferroelectrics |
Volume | 371 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2008 |
Keywords
- Ferroelectrics
- multiferroics
- ferroelectric random access memories
- nano-devices
- SURFACE FLASHOVER
- MECHANISMS
- INSULATORS
- VACUUM
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Dive into the research topics of 'Ferroelectric Thin-Film Devices'. Together they form a unique fingerprint.Projects
- 1 Finished
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Royal Society Fellowship 516002.K5799/je: Royal Society Fellowship 516002.K5799/je
Morrison, F. (PI)
1/08/06 → 30/09/09
Project: Fellowship