Ferroelectric Thin-Film Devices

J. F. Scott, Finlay D Morrison

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Several fundamental physics problems concerning ferroelectric thin films are discussed with direct application to industry problems. The first is a model of dielectric breakdown under d.c. voltage stressing, extended from single capacitor films to multilayer capacitors (MLCs). The second is an analysis of flash-over (arcing) breakdown in MLCs, including those with base metal electrodes (Ni). The third is the demonstration that any equivalent circuit model for real ferroelectric memories (FRAMs) must include a constant phase element (CPE). We then consider novel new prototype devices with industry potential for commercialization: three-dimensional [3D] DRAM capacitor trenches; piezoelectric nanotubes; and carbon nano-wire arrays with ferroelectric tips.
Original languageEnglish
Pages (from-to)3-9
Number of pages7
JournalFerroelectrics
Volume371
Issue number1
DOIs
Publication statusPublished - 2008

Keywords

  • Ferroelectrics
  • multiferroics
  • ferroelectric random access memories
  • nano-devices
  • SURFACE FLASHOVER
  • MECHANISMS
  • INSULATORS
  • VACUUM

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