Ferroelectric polarization switching with a remarkably high activation energy in orthorhombic GaFeO3 thin films

Seungwoo Song, Hyun Myung Jang, Nam-Suk Lee, Jong Y. Son, Rajeev Gupta, Ashish Garg, Jirawit Ratanapreechachai, James Floyd Scott

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)
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Abstract

Orthorhombic GaFeO3 (o-GFO) with the polar Pna21 space group is a prominent ferrite owing to its piezoelectricity and ferrimagnetism, coupled with magnetoelectric effects. Herein, we demonstrate large ferroelectric remanent polarization in undoped o-GFO thin films by adopting either a hexagonal strontium titanate (STO) or a cubic yttrium-stabilized zirconia (YSZ) substrate. The polarization-electric-field hysteresis curves of the polar c-axis-grown o-GFO film on a SrRuO3/STO substrate show the net switching polarization of ~35 μC cm−2 with an unusually high coercive field (Ec) of ±1400 kV cm−1 at room temperature. The positive-up and negative-down measurement also demonstrates the switching polarization of ~26 μC cm−2. The activation energy for the polarization switching, as obtained by density-functional theory calculations, is remarkably high, 1.05 eV per formula unit. We have theoretically shown that this high value accounts for the extraordinary high Ec and the stability of the polar Pna21 phase over a wide range of temperatures up to 1368 K.
Original languageEnglish
Article numbere242
Pages (from-to)1-9
Number of pages9
JournalAsia Materials
Volume8
DOIs
Publication statusPublished - 26 Feb 2016

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