Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films

R. K. Katiyar; Y. Sharma; D. Barrionuevo; S. Kooriyattil; S. P. Pavunny; J. S. Young; G. Morell; B. R. Weiner; R. S. Katiyar; James Floyd Scott

doi:10.1063/1.4908254

Ferroelectric photovoltaic properties in doubly substituted (Bi_0.9La_0.1)(Fe_0.97Ta_0.03)O₃ thin films

R. K. Katiyar, Y. Sharma, D. Barrionuevo, S. Kooriyattil, S. P. Pavunny, J. S. Young, G. Morell, B. R. Weiner, R. S. Katiyar, James Floyd Scott

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Doubly substituted [Bi_0.9La_0.1][Fe_0.97Ta_0.03]O₃ (BLFTO) films were fabricated on Pt/TiO₂/SiO₂/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ∼0.20 V and ∼1.35 mA/cm², respectively. The band gap of the films was determined to be ∼2.66 eV, slightly less than that of pure BiFeO₃ (2.67 eV). The PVproperties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.

Original language	English
Article number	082903
Number of pages	4
Journal	Applied Physics Letters
Volume	106
Issue number	8
DOIs	https://doi.org/10.1063/1.4908254
Publication status	Published - 23 Feb 2015

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.4908254

Scott_2015_APL_FerroelectricPhotovoltaic_FinalPubVersion
© 2015 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at: https://dx.doi.org/10.1063/1.4908254.
Final published version, 1.52 MB

Cite this

@article{99ab6025b6654be7a84de13fea8d3948,

title = "Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films",

abstract = "Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ∼0.20 V and ∼1.35 mA/cm2, respectively. The band gap of the films was determined to be ∼2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PVproperties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.",

author = "Katiyar, {R. K.} and Y. Sharma and D. Barrionuevo and S. Kooriyattil and Pavunny, {S. P.} and Young, {J. S.} and G. Morell and Weiner, {B. R.} and Katiyar, {R. S.} and Scott, {James Floyd}",

note = "This work was supported by the DOE-EPSCoR Grant No. DE-FG02-08ER46526. Acknowledgment is also due to NSF Grant No. #1002410 for providing fellowships to R.K.K., D.B., and J.S.Y.",

year = "2015",

month = feb,

day = "23",

doi = "10.1063/1.4908254",

language = "English",

volume = "106",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films

AU - Katiyar, R. K.

AU - Sharma, Y.

AU - Barrionuevo, D.

AU - Kooriyattil, S.

AU - Pavunny, S. P.

AU - Young, J. S.

AU - Morell, G.

AU - Weiner, B. R.

AU - Katiyar, R. S.

AU - Scott, James Floyd

N1 - This work was supported by the DOE-EPSCoR Grant No. DE-FG02-08ER46526. Acknowledgment is also due to NSF Grant No. #1002410 for providing fellowships to R.K.K., D.B., and J.S.Y.

PY - 2015/2/23

Y1 - 2015/2/23

N2 - Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ∼0.20 V and ∼1.35 mA/cm2, respectively. The band gap of the films was determined to be ∼2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PVproperties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.

AB - Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ∼0.20 V and ∼1.35 mA/cm2, respectively. The band gap of the films was determined to be ∼2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PVproperties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.

U2 - 10.1063/1.4908254

DO - 10.1063/1.4908254

M3 - Article

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082903

ER -