Ferroelectric nanotubes

F. D. Morrison; Y. Luo; I. Szafraniak; V. Nagarajan; R. B. Wehrspohn; M. Steinhart; J. H. Wendorff; N. D. Zakharov; E. D. Mishina; K. A. Vorotilov; A. S. Sigov; S. Nakabayashi; M. Alexe; R. Ramesh; J. F. Scott

Ferroelectric nanotubes

F. D. Morrison, Y. Luo, I. Szafraniak, V. Nagarajan, R. B. Wehrspohn, M. Steinhart, J. H. Wendorff, N. D. Zakharov, E. D. Mishina, K. A. Vorotilov, A. S. Sigov, S. Nakabayashi, M. Alexe, R. Ramesh, J. F. Scott^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report the independent invention of ferroelectric nanotubes from groups in several countries. Devices have been made with three different materials: lead zirconate-titanate PbZr_1-xTi_xO₃ (PZT); barium titanate BaTiO₃; and strontium bismuth tantalate SrBi₂Ta₂O₉,(SBT). Several different deposition techniques have been used successfully, including misted CSD (chemical solution deposition) and pore wetting. Ferroelectric hysteresis and high optical nonlinearity have been demonstrated. The structures are analyzed via SEM, TEM, XRD, AFM (piezo-mode), and SHG. Applications to trenching in Si dynamic random access memories, ink-jet printers, and photonic devices are discussed. Ferroelectric filled pores as small as 20 nm in diameter have been studied.

Original language	English
Pages (from-to)	114-122
Number of pages	9
Journal	Reviews on Advanced Materials Science
Volume	4
Issue number	2
Publication status	Published - 1 Aug 2003

Cite this

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title = "Ferroelectric nanotubes",

abstract = "We report the independent invention of ferroelectric nanotubes from groups in several countries. Devices have been made with three different materials: lead zirconate-titanate PbZr1-xTixO3 (PZT); barium titanate BaTiO3; and strontium bismuth tantalate SrBi2Ta2O9,(SBT). Several different deposition techniques have been used successfully, including misted CSD (chemical solution deposition) and pore wetting. Ferroelectric hysteresis and high optical nonlinearity have been demonstrated. The structures are analyzed via SEM, TEM, XRD, AFM (piezo-mode), and SHG. Applications to trenching in Si dynamic random access memories, ink-jet printers, and photonic devices are discussed. Ferroelectric filled pores as small as 20 nm in diameter have been studied.",

author = "Morrison, {F. D.} and Y. Luo and I. Szafraniak and V. Nagarajan and Wehrspohn, {R. B.} and M. Steinhart and Wendorff, {J. H.} and Zakharov, {N. D.} and Mishina, {E. D.} and Vorotilov, {K. A.} and Sigov, {A. S.} and S. Nakabayashi and M. Alexe and R. Ramesh and Scott, {J. F.}",

year = "2003",

month = aug,

day = "1",

language = "English",

volume = "4",

pages = "114--122",

journal = "Reviews on Advanced Materials Science",

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TY - JOUR

T1 - Ferroelectric nanotubes

AU - Morrison, F. D.

AU - Luo, Y.

AU - Szafraniak, I.

AU - Nagarajan, V.

AU - Wehrspohn, R. B.

AU - Steinhart, M.

AU - Wendorff, J. H.

AU - Zakharov, N. D.

AU - Mishina, E. D.

AU - Vorotilov, K. A.

AU - Sigov, A. S.

AU - Nakabayashi, S.

AU - Alexe, M.

AU - Ramesh, R.

AU - Scott, J. F.

PY - 2003/8/1

Y1 - 2003/8/1

N2 - We report the independent invention of ferroelectric nanotubes from groups in several countries. Devices have been made with three different materials: lead zirconate-titanate PbZr1-xTixO3 (PZT); barium titanate BaTiO3; and strontium bismuth tantalate SrBi2Ta2O9,(SBT). Several different deposition techniques have been used successfully, including misted CSD (chemical solution deposition) and pore wetting. Ferroelectric hysteresis and high optical nonlinearity have been demonstrated. The structures are analyzed via SEM, TEM, XRD, AFM (piezo-mode), and SHG. Applications to trenching in Si dynamic random access memories, ink-jet printers, and photonic devices are discussed. Ferroelectric filled pores as small as 20 nm in diameter have been studied.

AB - We report the independent invention of ferroelectric nanotubes from groups in several countries. Devices have been made with three different materials: lead zirconate-titanate PbZr1-xTixO3 (PZT); barium titanate BaTiO3; and strontium bismuth tantalate SrBi2Ta2O9,(SBT). Several different deposition techniques have been used successfully, including misted CSD (chemical solution deposition) and pore wetting. Ferroelectric hysteresis and high optical nonlinearity have been demonstrated. The structures are analyzed via SEM, TEM, XRD, AFM (piezo-mode), and SHG. Applications to trenching in Si dynamic random access memories, ink-jet printers, and photonic devices are discussed. Ferroelectric filled pores as small as 20 nm in diameter have been studied.

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M3 - Article

AN - SCOPUS:4944230204

SN - 1606-5131

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SP - 114

EP - 122

JO - Reviews on Advanced Materials Science

JF - Reviews on Advanced Materials Science

IS - 2

ER -

Ferroelectric nanotubes

Abstract

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