Ferroelectric Domain Wall Injection

Jonathan R. Whyte, Raymond G. P. McQuaid, Pankaj Sharma, Carlota Canalias, James F. Scott, Alexei Gruverman, J. Marty Gregg*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)

Abstract

Ferroelectric domain wall injection has been demonstrated by engineering of the local electric field, using focused ion beam milled defects in thin single crystal lamellae of KTiOPO4 (KTP). The electric field distribution (top) displays localized field hot-spots, which correlate with nucleation events (bottom). Designed local field variations can also dictate subsequent domain wall mobility, demonstrating a new paradigm in ferroelectric domain wall control.

Original languageEnglish
Pages (from-to)293-298
Number of pages6
JournalAdvanced Materials
Volume26
Issue number2
DOIs
Publication statusPublished - 15 Jan 2014

Keywords

  • SINGLE-CRYSTAL BATIO3
  • SHEET SUPERCONDUCTIVITY
  • BOUNDARIES
  • CONDUCTANCE
  • NANOWIRES
  • DYNAMICS
  • KTIOPO4
  • BIFEO3
  • MEMORY
  • WO3-X

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