Ferroelectric Bloch-line switching: A paradigm for memory devices?

Physics

• Dipole Moment 100%
• Ferroelectric Material 100%
• Ferroelastic Material 50%
• Crystal Structure 50%
• Electric Field 50%
• Domain Wall 50%
• Anisotropy 50%

Material Science

• Ferroelectric Material 100%
• Density 100%
• Vortex 66%
• Domain Wall 33%
• Anisotropy 33%
• Crystal Structure 33%

Engineering

• Dipole Moment 100%
• Domain Wall 50%
• Vortex 50%
• Applied Electric Field 50%
• Line Vortex 50%
• Crystal Structure 50%