Ferroelectric Bloch-line switching: A paradigm for memory devices?

E. K. H. Salje*, J. F. Scott

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Ferroelectric Bloch-line switching: A paradigm for memory devices?'. Together they form a unique fingerprint.

Material Science

Physics

Engineering