Ferroelectric and photovoltaic properties of transition metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta thin films

Shalini Kumari; Nora Ortega; Ashok Kumar; J. F. Scott; R. S. Katiyar

doi:10.1063/1.4868380

Ferroelectric and photovoltaic properties of transition metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta thin films

Shalini Kumari, Nora Ortega, Ashok Kumar^*, J. F. Scott, R. S. Katiyar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta (PZTNi30) ferroelectric having large remanent polarization (15-30 mu C/cm(2)), 0.3-0.4 V open circuit voltage (V-OC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 mu A/cm(2)) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of V-OC and direction of short circuit current (I-SC), a step forward towards the realization of non-centrosymmetric ferroelectric material sensitive to visible light. (C) 2014 Author(s).

Original language	English
Article number	037101
Number of pages	11
Journal	AIP Advances
Volume	4
Issue number	3
DOIs	https://doi.org/10.1063/1.4868380
Publication status	Published - Mar 2014

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

SUBSTITUTION
CERAMICS
BIFEO3
OXIDES

Access to Document

10.1063/1.4868380

Handle.net

Persistent link

Cite this

@article{fec742bc62944a849e1de1d4d272efbf,

title = "Ferroelectric and photovoltaic properties of transition metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta thin films",

abstract = "We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta (PZTNi30) ferroelectric having large remanent polarization (15-30 mu C/cm(2)), 0.3-0.4 V open circuit voltage (V-OC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 mu A/cm(2)) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of V-OC and direction of short circuit current (I-SC), a step forward towards the realization of non-centrosymmetric ferroelectric material sensitive to visible light. (C) 2014 Author(s).",

keywords = "SUBSTITUTION, CERAMICS, BIFEO3, OXIDES",

author = "Shalini Kumari and Nora Ortega and Ashok Kumar and Scott, \{J. F.\} and Katiyar, \{R. S.\}",

year = "2014",

month = mar,

doi = "10.1063/1.4868380",

language = "English",

volume = "4",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Ferroelectric and photovoltaic properties of transition metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta thin films

AU - Kumari, Shalini

AU - Ortega, Nora

AU - Kumar, Ashok

AU - Scott, J. F.

AU - Katiyar, R. S.

PY - 2014/3

Y1 - 2014/3

N2 - We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta (PZTNi30) ferroelectric having large remanent polarization (15-30 mu C/cm(2)), 0.3-0.4 V open circuit voltage (V-OC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 mu A/cm(2)) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of V-OC and direction of short circuit current (I-SC), a step forward towards the realization of non-centrosymmetric ferroelectric material sensitive to visible light. (C) 2014 Author(s).

AB - We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta (PZTNi30) ferroelectric having large remanent polarization (15-30 mu C/cm(2)), 0.3-0.4 V open circuit voltage (V-OC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 mu A/cm(2)) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of V-OC and direction of short circuit current (I-SC), a step forward towards the realization of non-centrosymmetric ferroelectric material sensitive to visible light. (C) 2014 Author(s).

KW - SUBSTITUTION

KW - CERAMICS

KW - BIFEO3

KW - OXIDES

UR - https://www.scopus.com/pages/publications/84896377105

U2 - 10.1063/1.4868380

DO - 10.1063/1.4868380

M3 - Article

SN - 2158-3226

VL - 4

JO - AIP Advances

JF - AIP Advances

IS - 3

M1 - 037101

ER -

Ferroelectric and photovoltaic properties of transition metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta thin films

Abstract

UN SDGs

Keywords

Access to Document

Handle.net

Other files and links

Fingerprint

Cite this