Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM

N. K. Metzger; C. G. Leburn; A. A. Lagatsky; C. T. A. Brown; S. Calvez; D. Burns; H. D. Sun; M. D. Dawson; J. C. Harmand; W. Sibbett

doi:10.1364/OE.16.018739

Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM

N. K. Metzger, C. G. Leburn, A. A. Lagatsky, C. T. A. Brown, S. Calvez, D. Burns, H. D. Sun, M. D. Dawson, J. C. Harmand, W. Sibbett

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

The operation of a femtosecond Cr⁴⁺:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10 mu J/cm⁽²⁾ and a short recovery time of 12ps. (c) 2008 Optical Society of America

Original language	English
Pages (from-to)	18739-18744
Number of pages	6
Journal	Optics Express
Volume	16
Issue number	23
DOIs	https://doi.org/10.1364/OE.16.018739
Publication status	Published - 10 Nov 2008

Keywords

SOLID-STATE LASERS
SEMICONDUCTOR SATURABLE-ABSORBER
MODE-LOCKING
CR4+-YAG LASER

Access to Document

10.1364/OE.16.018739

Cite this

@article{8cab7ee6ef04489a8aeac1216e77fedd,

title = "Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM",

abstract = "The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10 mu J/cm(2) and a short recovery time of 12ps. (c) 2008 Optical Society of America",

keywords = "SOLID-STATE LASERS, SEMICONDUCTOR SATURABLE-ABSORBER, MODE-LOCKING, CR4+-YAG LASER",

author = "Metzger, {N. K.} and Leburn, {C. G.} and Lagatsky, {A. A.} and Brown, {C. T. A.} and S. Calvez and D. Burns and Sun, {H. D.} and Dawson, {M. D.} and Harmand, {J. C.} and W. Sibbett",

year = "2008",

month = nov,

day = "10",

doi = "10.1364/OE.16.018739",

language = "English",

volume = "16",

pages = "18739--18744",

journal = "Optics Express",

issn = "1094-4087",

publisher = "OPTICAL SOC AMER",

number = "23",

}

TY - JOUR

T1 - Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM

AU - Metzger, N. K.

AU - Leburn, C. G.

AU - Lagatsky, A. A.

AU - Brown, C. T. A.

AU - Calvez, S.

AU - Burns, D.

AU - Sun, H. D.

AU - Dawson, M. D.

AU - Harmand, J. C.

AU - Sibbett, W.

PY - 2008/11/10

Y1 - 2008/11/10

N2 - The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10 mu J/cm(2) and a short recovery time of 12ps. (c) 2008 Optical Society of America

AB - The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10 mu J/cm(2) and a short recovery time of 12ps. (c) 2008 Optical Society of America

KW - SOLID-STATE LASERS

KW - SEMICONDUCTOR SATURABLE-ABSORBER

KW - MODE-LOCKING

KW - CR4+-YAG LASER

UR - http://www.scopus.com/inward/record.url?scp=56149098502&partnerID=8YFLogxK

U2 - 10.1364/OE.16.018739

DO - 10.1364/OE.16.018739

M3 - Article

SN - 1094-4087

VL - 16

SP - 18739

EP - 18744

JO - Optics Express

JF - Optics Express

IS - 23

ER -

Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this