Extraction of sheet resistance and linewidth from all-copper ECD test structures fabricated from silicon preforms

B. J.R. Shulver*, A. S. Bunting, A. M. Gundlach, L. I. Haworth, A. W.S. Ross, S. Smith, A. J. Snell, J. T.M. Stevenson, A. J. Walton, R. A. Allen, M. W. Cresswell

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a non-destructive and efficient method for determining CD values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of various tests which have been conducted to evaluate the current design.

Original languageEnglish
Title of host publication2007 IEEE International Conference on Microelectronic Test Structures, ICMTS - Conference Proceedings
Pages14-19
Number of pages6
DOIs
Publication statusPublished - 27 Sept 2007
Event2007 IEEE International Conference on Microelectronic Test Structures, ICMTS '07 - Bunkyo-ku, Japan
Duration: 19 Mar 200722 Mar 2007

Conference

Conference2007 IEEE International Conference on Microelectronic Test Structures, ICMTS '07
Country/TerritoryJapan
CityBunkyo-ku
Period19/03/0722/03/07

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