Extraction of sheet resistance and linewidth from all-copper ECD test structures fabricated from silicon preforms

B. J.R. Shulver; A. S. Bunting; A. M. Gundlach; L. I. Haworth; A. W.S. Ross; S. Smith; A. J. Snell; J. T.M. Stevenson; A. J. Walton; R. A. Allen; M. W. Cresswell

doi:10.1109/ICMTS.2007.374447

Extraction of sheet resistance and linewidth from all-copper ECD test structures fabricated from silicon preforms

B. J.R. Shulver^*, A. S. Bunting, A. M. Gundlach, L. I. Haworth, A. W.S. Ross, S. Smith, A. J. Snell, J. T.M. Stevenson, A. J. Walton, R. A. Allen, M. W. Cresswell

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a non-destructive and efficient method for determining CD values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of various tests which have been conducted to evaluate the current design.

Original language	English
Title of host publication	2007 IEEE International Conference on Microelectronic Test Structures, ICMTS - Conference Proceedings
Pages	14-19
Number of pages	6
DOIs	https://doi.org/10.1109/ICMTS.2007.374447
Publication status	Published - 27 Sept 2007
Event	2007 IEEE International Conference on Microelectronic Test Structures, ICMTS '07 - Bunkyo-ku, Japan Duration: 19 Mar 2007 → 22 Mar 2007

Conference

Conference	2007 IEEE International Conference on Microelectronic Test Structures, ICMTS '07
Country/Territory	Japan
City	Bunkyo-ku
Period	19/03/07 → 22/03/07

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10.1109/ICMTS.2007.374447

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Shulver, B. J. R., Bunting, A. S., Gundlach, A. M., Haworth, L. I., Ross, A. W. S., Smith, S., Snell, A. J., Stevenson, J. T. M., Walton, A. J., Allen, R. A., & Cresswell, M. W. (2007). Extraction of sheet resistance and linewidth from all-copper ECD test structures fabricated from silicon preforms. In 2007 IEEE International Conference on Microelectronic Test Structures, ICMTS - Conference Proceedings (pp. 14-19). Article 4252397 https://doi.org/10.1109/ICMTS.2007.374447

@inproceedings{0d88a4d2900a4f3fac478b679611aef0,

title = "Extraction of sheet resistance and linewidth from all-copper ECD test structures fabricated from silicon preforms",

abstract = "Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a non-destructive and efficient method for determining CD values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of various tests which have been conducted to evaluate the current design.",

author = "Shulver, {B. J.R.} and Bunting, {A. S.} and Gundlach, {A. M.} and Haworth, {L. I.} and Ross, {A. W.S.} and S. Smith and Snell, {A. J.} and Stevenson, {J. T.M.} and Walton, {A. J.} and Allen, {R. A.} and Cresswell, {M. W.}",

year = "2007",

month = sep,

day = "27",

doi = "10.1109/ICMTS.2007.374447",

language = "English",

isbn = "142440780X",

pages = "14--19",

booktitle = "2007 IEEE International Conference on Microelectronic Test Structures, ICMTS - Conference Proceedings",

note = "2007 IEEE International Conference on Microelectronic Test Structures, ICMTS '07 ; Conference date: 19-03-2007 Through 22-03-2007",

}

Shulver, BJR, Bunting, AS, Gundlach, AM, Haworth, LI, Ross, AWS, Smith, S, Snell, AJ, Stevenson, JTM, Walton, AJ, Allen, RA & Cresswell, MW 2007, Extraction of sheet resistance and linewidth from all-copper ECD test structures fabricated from silicon preforms. in 2007 IEEE International Conference on Microelectronic Test Structures, ICMTS - Conference Proceedings., 4252397, pp. 14-19, 2007 IEEE International Conference on Microelectronic Test Structures, ICMTS '07, Bunkyo-ku, Japan, 19/03/07. https://doi.org/10.1109/ICMTS.2007.374447

Extraction of sheet resistance and linewidth from all-copper ECD test structures fabricated from silicon preforms. / Shulver, B. J.R.; Bunting, A. S.; Gundlach, A. M. et al.
2007 IEEE International Conference on Microelectronic Test Structures, ICMTS - Conference Proceedings. 2007. p. 14-19 4252397.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Extraction of sheet resistance and linewidth from all-copper ECD test structures fabricated from silicon preforms

AU - Shulver, B. J.R.

AU - Bunting, A. S.

AU - Gundlach, A. M.

AU - Haworth, L. I.

AU - Ross, A. W.S.

AU - Smith, S.

AU - Snell, A. J.

AU - Stevenson, J. T.M.

AU - Walton, A. J.

AU - Allen, R. A.

AU - Cresswell, M. W.

PY - 2007/9/27

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N2 - Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a non-destructive and efficient method for determining CD values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of various tests which have been conducted to evaluate the current design.

AB - Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a non-destructive and efficient method for determining CD values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of various tests which have been conducted to evaluate the current design.

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BT - 2007 IEEE International Conference on Microelectronic Test Structures, ICMTS - Conference Proceedings

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ER -

Extraction of sheet resistance and linewidth from all-copper ECD test structures fabricated from silicon preforms

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