Extraction of sheet resistance and line width from all-copper BCD test structures fabricated from silicon preforms

Byron J.R. Shulver; Andrew S. Bunting; Alan M. Gundlach; Les I. Haworth; Alan W.S. Ross; Stewart Smith; Anthony J. Snell; J. T.M. Stevenson; Anthony J. Walton; Richard Allen; Michael W. Cresswell

doi:10.1109/TSM.2008.2004312

Extraction of sheet resistance and line width from all-copper BCD test structures fabricated from silicon preforms

Byron J.R. Shulver, Andrew S. Bunting, Alan M. Gundlach, Les I. Haworth, Alan W.S. Ross, Stewart Smith, Anthony J. Snell, J. T.M. Stevenson, Anthony J. Walton, Richard Allen, Michael W. Cresswell

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Test structures have been fabricated to allow electrical critical dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in integrated circuit (IC) interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a nondestructive and efficient method for determining critical dimension (CD) values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of tests which have been conducted to evaluate various extraction methods for sheet resistance and line width values from the current design.

Original language	English
Article number	4657423
Pages (from-to)	495-503
Number of pages	9
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	21
Issue number	4
DOIs	https://doi.org/10.1109/TSM.2008.2004312
Publication status	Published - 1 Nov 2008

Keywords

Copper
Critical dimension (CD)
Electrical critical dimension (ECD)
Electrical test structure
Line width
Metrology

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10.1109/TSM.2008.2004312

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Shulver, B. J. R., Bunting, A. S., Gundlach, A. M., Haworth, L. I., Ross, A. W. S., Smith, S., Snell, A. J., Stevenson, J. T. M., Walton, A. J., Allen, R., & Cresswell, M. W. (2008). Extraction of sheet resistance and line width from all-copper BCD test structures fabricated from silicon preforms. IEEE Transactions on Semiconductor Manufacturing, 21(4), 495-503. Article 4657423. https://doi.org/10.1109/TSM.2008.2004312

@article{0241fffd390f4fd786c1baa5dcbdfdb3,

title = "Extraction of sheet resistance and line width from all-copper BCD test structures fabricated from silicon preforms",

abstract = "Test structures have been fabricated to allow electrical critical dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in integrated circuit (IC) interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a nondestructive and efficient method for determining critical dimension (CD) values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of tests which have been conducted to evaluate various extraction methods for sheet resistance and line width values from the current design.",

keywords = "Copper, Critical dimension (CD), Electrical critical dimension (ECD), Electrical test structure, Line width, Metrology",

author = "Shulver, {Byron J.R.} and Bunting, {Andrew S.} and Gundlach, {Alan M.} and Haworth, {Les I.} and Ross, {Alan W.S.} and Stewart Smith and Snell, {Anthony J.} and Stevenson, {J. T.M.} and Walton, {Anthony J.} and Richard Allen and Cresswell, {Michael W.}",

year = "2008",

month = nov,

day = "1",

doi = "10.1109/TSM.2008.2004312",

language = "English",

volume = "21",

pages = "495--503",

journal = "IEEE Transactions on Semiconductor Manufacturing",

issn = "0894-6507",

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Shulver, BJR, Bunting, AS, Gundlach, AM, Haworth, LI, Ross, AWS, Smith, S, Snell, AJ, Stevenson, JTM, Walton, AJ, Allen, R & Cresswell, MW 2008, 'Extraction of sheet resistance and line width from all-copper BCD test structures fabricated from silicon preforms', IEEE Transactions on Semiconductor Manufacturing, vol. 21, no. 4, 4657423, pp. 495-503. https://doi.org/10.1109/TSM.2008.2004312

TY - JOUR

T1 - Extraction of sheet resistance and line width from all-copper BCD test structures fabricated from silicon preforms

AU - Shulver, Byron J.R.

AU - Bunting, Andrew S.

AU - Gundlach, Alan M.

AU - Haworth, Les I.

AU - Ross, Alan W.S.

AU - Smith, Stewart

AU - Snell, Anthony J.

AU - Stevenson, J. T.M.

AU - Walton, Anthony J.

AU - Allen, Richard

AU - Cresswell, Michael W.

PY - 2008/11/1

Y1 - 2008/11/1

N2 - Test structures have been fabricated to allow electrical critical dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in integrated circuit (IC) interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a nondestructive and efficient method for determining critical dimension (CD) values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of tests which have been conducted to evaluate various extraction methods for sheet resistance and line width values from the current design.

AB - Test structures have been fabricated to allow electrical critical dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in integrated circuit (IC) interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a nondestructive and efficient method for determining critical dimension (CD) values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of tests which have been conducted to evaluate various extraction methods for sheet resistance and line width values from the current design.

KW - Copper

KW - Critical dimension (CD)

KW - Electrical critical dimension (ECD)

KW - Electrical test structure

KW - Line width

KW - Metrology

U2 - 10.1109/TSM.2008.2004312

DO - 10.1109/TSM.2008.2004312

M3 - Article

AN - SCOPUS:55649111856

SN - 0894-6507

VL - 21

SP - 495

EP - 503

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

IS - 4

M1 - 4657423

ER -

Extraction of sheet resistance and line width from all-copper BCD test structures fabricated from silicon preforms

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