Experimental evidence on quantum well-quantum dash energy transfer in tunnel injection structures for 1.55 mu m emission

G. Sek*, P. Poloczek, P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, S. Hein, Sven Höfling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Here comes a report on the investigation of the energy transfer in InP-based tunnel injection structures, consisting of InAs/InAlGaAs quantum dashes (QDashes) and an InGaAs/InAlGaAs quantum well (QW), designed for 1.55 mu m emission at room temperature. Temperature dependent photoluminescence excitation (PLE) spectroscopy was used to experimentally confirm that the carriers created in the well reach the quantum dash layer by the tunneling through a thin InAlAs/InAlGaAs barrier and recombine there radiatively. A measurable QW-QDash energy transfer has been detected up to 130 K. The electronic structure of the whole complex system obtained by modulation spectroscopy exhibits full conformity with the PLE measurement results. (c) 2007 American Institute of Physics.

Original languageEnglish
Article number081915
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number8
DOIs
Publication statusPublished - 19 Feb 2007

Keywords

  • DOT LASERS
  • ROOM-TEMPERATURE
  • THRESHOLD CURRENT
  • HETEROSTRUCTURES
  • GAAS

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