Experimental evidence on quantum well-quantum dash energy transfer in tunnel injection structures for 1.55 mu m emission

G. Sek; P. Poloczek; P. Podemski; R. Kudrawiec; J. Misiewicz; A. Somers; S. Hein; Sven Höfling; A. Forchel

doi:10.1063/1.2472543

Experimental evidence on quantum well-quantum dash energy transfer in tunnel injection structures for 1.55 mu m emission

G. Sek^*, P. Poloczek, P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, S. Hein, Sven Höfling, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Here comes a report on the investigation of the energy transfer in InP-based tunnel injection structures, consisting of InAs/InAlGaAs quantum dashes (QDashes) and an InGaAs/InAlGaAs quantum well (QW), designed for 1.55 mu m emission at room temperature. Temperature dependent photoluminescence excitation (PLE) spectroscopy was used to experimentally confirm that the carriers created in the well reach the quantum dash layer by the tunneling through a thin InAlAs/InAlGaAs barrier and recombine there radiatively. A measurable QW-QDash energy transfer has been detected up to 130 K. The electronic structure of the whole complex system obtained by modulation spectroscopy exhibits full conformity with the PLE measurement results. (c) 2007 American Institute of Physics.

Original language	English
Article number	081915
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	8
DOIs	https://doi.org/10.1063/1.2472543
Publication status	Published - 19 Feb 2007

Keywords

DOT LASERS
ROOM-TEMPERATURE
THRESHOLD CURRENT
HETEROSTRUCTURES
GAAS

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Cite this

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title = "Experimental evidence on quantum well-quantum dash energy transfer in tunnel injection structures for 1.55 mu m emission",

abstract = "Here comes a report on the investigation of the energy transfer in InP-based tunnel injection structures, consisting of InAs/InAlGaAs quantum dashes (QDashes) and an InGaAs/InAlGaAs quantum well (QW), designed for 1.55 mu m emission at room temperature. Temperature dependent photoluminescence excitation (PLE) spectroscopy was used to experimentally confirm that the carriers created in the well reach the quantum dash layer by the tunneling through a thin InAlAs/InAlGaAs barrier and recombine there radiatively. A measurable QW-QDash energy transfer has been detected up to 130 K. The electronic structure of the whole complex system obtained by modulation spectroscopy exhibits full conformity with the PLE measurement results. (c) 2007 American Institute of Physics.",

keywords = "DOT LASERS, ROOM-TEMPERATURE, THRESHOLD CURRENT, HETEROSTRUCTURES, GAAS",

author = "G. Sek and P. Poloczek and P. Podemski and R. Kudrawiec and J. Misiewicz and A. Somers and S. Hein and Sven H{\"o}fling and A. Forchel",

year = "2007",

month = feb,

day = "19",

doi = "10.1063/1.2472543",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Experimental evidence on quantum well-quantum dash energy transfer in tunnel injection structures for 1.55 mu m emission

AU - Sek, G.

AU - Poloczek, P.

AU - Podemski, P.

AU - Kudrawiec, R.

AU - Misiewicz, J.

AU - Somers, A.

AU - Hein, S.

AU - Höfling, Sven

AU - Forchel, A.

PY - 2007/2/19

Y1 - 2007/2/19

N2 - Here comes a report on the investigation of the energy transfer in InP-based tunnel injection structures, consisting of InAs/InAlGaAs quantum dashes (QDashes) and an InGaAs/InAlGaAs quantum well (QW), designed for 1.55 mu m emission at room temperature. Temperature dependent photoluminescence excitation (PLE) spectroscopy was used to experimentally confirm that the carriers created in the well reach the quantum dash layer by the tunneling through a thin InAlAs/InAlGaAs barrier and recombine there radiatively. A measurable QW-QDash energy transfer has been detected up to 130 K. The electronic structure of the whole complex system obtained by modulation spectroscopy exhibits full conformity with the PLE measurement results. (c) 2007 American Institute of Physics.

AB - Here comes a report on the investigation of the energy transfer in InP-based tunnel injection structures, consisting of InAs/InAlGaAs quantum dashes (QDashes) and an InGaAs/InAlGaAs quantum well (QW), designed for 1.55 mu m emission at room temperature. Temperature dependent photoluminescence excitation (PLE) spectroscopy was used to experimentally confirm that the carriers created in the well reach the quantum dash layer by the tunneling through a thin InAlAs/InAlGaAs barrier and recombine there radiatively. A measurable QW-QDash energy transfer has been detected up to 130 K. The electronic structure of the whole complex system obtained by modulation spectroscopy exhibits full conformity with the PLE measurement results. (c) 2007 American Institute of Physics.

KW - DOT LASERS

KW - ROOM-TEMPERATURE

KW - THRESHOLD CURRENT

KW - HETEROSTRUCTURES

KW - GAAS

U2 - 10.1063/1.2472543

DO - 10.1063/1.2472543

M3 - Article

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081915

ER -

Experimental evidence on quantum well-quantum dash energy transfer in tunnel injection structures for 1.55 mu m emission

Abstract

Keywords

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