Exciton-Polariton Laser Diodes

C. Schneider; N. Y. Kim; A. Rahimi-Iman; W. H. Nitsche; M. Lermer; M. Kamp; S. Reitzenstein; L. Worschech; Sven Höfling; Y. Yamamoto; A. Forchel

Exciton-Polariton Laser Diodes

C. Schneider^*, N. Y. Kim, A. Rahimi-Iman, W. H. Nitsche, M. Lermer, M. Kamp, S. Reitzenstein, L. Worschech, Sven Höfling, Y. Yamamoto, A. Forchel

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Exciton-polariton laser diodes are realized by integrating four InGaAs quantum wells in high quality factor doped distributed Bragg reflector microcavities. Efficient current injection into the active region allow to preserve the strong coupling regime between excitons and photons across the threshold of polariton lasing.

Original language	English
Title of host publication	22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE
Place of Publication	NEW YORK
Publisher	IEEE
Pages	201-202
Number of pages	2
ISBN (Print)	978-1-4244-5684-0
Publication status	Published - 2010
Event	22nd IEEE International Semiconductor Laser Conference - Kyoto, Japan Duration: 26 Sept 2010 → 30 Sept 2010

Conference

Conference	22nd IEEE International Semiconductor Laser Conference
Country/Territory	Japan
Period	26/09/10 → 30/09/10

Cite this

@inproceedings{909ecb4fb4604c4192a9ed1419880855,

title = "Exciton-Polariton Laser Diodes",

abstract = "Exciton-polariton laser diodes are realized by integrating four InGaAs quantum wells in high quality factor doped distributed Bragg reflector microcavities. Efficient current injection into the active region allow to preserve the strong coupling regime between excitons and photons across the threshold of polariton lasing.",

author = "C. Schneider and Kim, {N. Y.} and A. Rahimi-Iman and Nitsche, {W. H.} and M. Lermer and M. Kamp and S. Reitzenstein and L. Worschech and Sven H{\"o}fling and Y. Yamamoto and A. Forchel",

year = "2010",

language = "English",

isbn = "978-1-4244-5684-0",

pages = "201--202",

booktitle = "22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE",

publisher = "IEEE",

note = "22nd IEEE International Semiconductor Laser Conference ; Conference date: 26-09-2010 Through 30-09-2010",

}

TY - GEN

T1 - Exciton-Polariton Laser Diodes

AU - Schneider, C.

AU - Kim, N. Y.

AU - Rahimi-Iman, A.

AU - Nitsche, W. H.

AU - Lermer, M.

AU - Kamp, M.

AU - Reitzenstein, S.

AU - Worschech, L.

AU - Höfling, Sven

AU - Yamamoto, Y.

AU - Forchel, A.

PY - 2010

Y1 - 2010

N2 - Exciton-polariton laser diodes are realized by integrating four InGaAs quantum wells in high quality factor doped distributed Bragg reflector microcavities. Efficient current injection into the active region allow to preserve the strong coupling regime between excitons and photons across the threshold of polariton lasing.

AB - Exciton-polariton laser diodes are realized by integrating four InGaAs quantum wells in high quality factor doped distributed Bragg reflector microcavities. Efficient current injection into the active region allow to preserve the strong coupling regime between excitons and photons across the threshold of polariton lasing.

M3 - Conference contribution

SN - 978-1-4244-5684-0

SP - 201

EP - 202

BT - 22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE

PB - IEEE

CY - NEW YORK

T2 - 22nd IEEE International Semiconductor Laser Conference

Y2 - 26 September 2010 through 30 September 2010

ER -

Exciton-Polariton Laser Diodes

Abstract

Conference

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