Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes

G. Sek; A. Musial; P. Podemski; M. Syperek; J. Misiewicz; A. Loeffler; Sven Höfling; L. Worschech; A. Forchel

doi:10.1063/1.3366704

Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes

G. Sek^*, A. Musial, P. Podemski, M. Syperek, J. Misiewicz, A. Loeffler, Sven Höfling, L. Worschech, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the emission properties of single molecular-beam-epitaxially grown InGaAs/GaAs quantum dashes. Supported by a few level rate equation model it has been revealed a decreased exciton to biexciton radiative lifetimes ratio being a fingerprint of a weak carrier confinement. Furthermore, a biexciton sideband, connected with the Coulomb interaction of quantum dash biexciton with excitons confined in the wetting layer (WL), has been observed in photoluminescence (PL). Both the effects have found a confirmation in direct measurements of PL decay times, including long radiative lifetimes of the WL states which appeared to have a localized character. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3366704]

Original language	English
Article number	096106
Number of pages	3
Journal	Journal of Applied Physics
Volume	107
Issue number	9
DOIs	https://doi.org/10.1063/1.3366704
Publication status	Published - 1 May 2010

Keywords

RESOLVED OPTICAL CHARACTERIZATION
SCANNING-TUNNELING-MICROSCOPY
INGAAS/GAAS HETEROSTRUCTURES
DOTS
MICROCAVITY
BOXES

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@article{3f2e982212644cb78af88b2b0e993ad7,

title = "Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes",

abstract = "We report on the emission properties of single molecular-beam-epitaxially grown InGaAs/GaAs quantum dashes. Supported by a few level rate equation model it has been revealed a decreased exciton to biexciton radiative lifetimes ratio being a fingerprint of a weak carrier confinement. Furthermore, a biexciton sideband, connected with the Coulomb interaction of quantum dash biexciton with excitons confined in the wetting layer (WL), has been observed in photoluminescence (PL). Both the effects have found a confirmation in direct measurements of PL decay times, including long radiative lifetimes of the WL states which appeared to have a localized character. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3366704]",

keywords = "RESOLVED OPTICAL CHARACTERIZATION, SCANNING-TUNNELING-MICROSCOPY, INGAAS/GAAS HETEROSTRUCTURES, DOTS, MICROCAVITY, BOXES",

author = "G. Sek and A. Musial and P. Podemski and M. Syperek and J. Misiewicz and A. Loeffler and Sven H{\"o}fling and L. Worschech and A. Forchel",

year = "2010",

month = may,

day = "1",

doi = "10.1063/1.3366704",

language = "English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes

AU - Sek, G.

AU - Musial, A.

AU - Podemski, P.

AU - Syperek, M.

AU - Misiewicz, J.

AU - Loeffler, A.

AU - Höfling, Sven

AU - Worschech, L.

AU - Forchel, A.

PY - 2010/5/1

Y1 - 2010/5/1

N2 - We report on the emission properties of single molecular-beam-epitaxially grown InGaAs/GaAs quantum dashes. Supported by a few level rate equation model it has been revealed a decreased exciton to biexciton radiative lifetimes ratio being a fingerprint of a weak carrier confinement. Furthermore, a biexciton sideband, connected with the Coulomb interaction of quantum dash biexciton with excitons confined in the wetting layer (WL), has been observed in photoluminescence (PL). Both the effects have found a confirmation in direct measurements of PL decay times, including long radiative lifetimes of the WL states which appeared to have a localized character. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3366704]

AB - We report on the emission properties of single molecular-beam-epitaxially grown InGaAs/GaAs quantum dashes. Supported by a few level rate equation model it has been revealed a decreased exciton to biexciton radiative lifetimes ratio being a fingerprint of a weak carrier confinement. Furthermore, a biexciton sideband, connected with the Coulomb interaction of quantum dash biexciton with excitons confined in the wetting layer (WL), has been observed in photoluminescence (PL). Both the effects have found a confirmation in direct measurements of PL decay times, including long radiative lifetimes of the WL states which appeared to have a localized character. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3366704]

KW - RESOLVED OPTICAL CHARACTERIZATION

KW - SCANNING-TUNNELING-MICROSCOPY

KW - INGAAS/GAAS HETEROSTRUCTURES

KW - DOTS

KW - MICROCAVITY

KW - BOXES

U2 - 10.1063/1.3366704

DO - 10.1063/1.3366704

M3 - Article

SN - 0021-8979

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 096106

ER -

Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes

Abstract

Keywords

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