Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes

G. Sek*, A. Musial, P. Podemski, M. Syperek, J. Misiewicz, A. Loeffler, Sven Höfling, L. Worschech, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We report on the emission properties of single molecular-beam-epitaxially grown InGaAs/GaAs quantum dashes. Supported by a few level rate equation model it has been revealed a decreased exciton to biexciton radiative lifetimes ratio being a fingerprint of a weak carrier confinement. Furthermore, a biexciton sideband, connected with the Coulomb interaction of quantum dash biexciton with excitons confined in the wetting layer (WL), has been observed in photoluminescence (PL). Both the effects have found a confirmation in direct measurements of PL decay times, including long radiative lifetimes of the WL states which appeared to have a localized character. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3366704]

Original languageEnglish
Article number096106
Number of pages3
JournalJournal of Applied Physics
Volume107
Issue number9
DOIs
Publication statusPublished - 1 May 2010

Keywords

  • RESOLVED OPTICAL CHARACTERIZATION
  • SCANNING-TUNNELING-MICROSCOPY
  • INGAAS/GAAS HETEROSTRUCTURES
  • DOTS
  • MICROCAVITY
  • BOXES

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