Exciton and biexciton emission from a single InAs/InP quantum dash

G. Sek*, P. Podemski, A. Musial, J. Misiewicz, S. Hein, Sven Höfling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

Molecular beam epitaxy grown InAs/InGaAlAs/InP quantum dashes designed for the 1.5 mu m range were investigated by microphotoluminescence spectroscopy. The exciton and biexciton emission from a single quantum dash was detected revealing a biexciton binding energy of about 0.4 meV. The dependence of the photoluminescence intensity versus the excitation power density was determined and analyzed using the three level rate equation model, which allowed to confirm that the observed lines originate from the same single quantum dash.

Original languageEnglish
Article number086104
Number of pages3
JournalJournal of Applied Physics
Volume105
Issue number8
DOIs
Publication statusPublished - 15 Apr 2009

Keywords

  • aluminium compounds
  • biexcitons
  • gallium compounds
  • III-V semiconductors
  • indium compounds
  • molecular beam epitaxial growth
  • photoluminescence
  • quantum dots
  • OPTICAL AMPLIFIERS
  • DOTS
  • LASERS

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