Exciton and biexciton emission from a single InAs/InP quantum dash

G. Sek; P. Podemski; A. Musial; J. Misiewicz; S. Hein; Sven Höfling; A. Forchel

doi:10.1063/1.3116551

Exciton and biexciton emission from a single InAs/InP quantum dash

G. Sek^*, P. Podemski, A. Musial, J. Misiewicz, S. Hein, Sven Höfling, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Molecular beam epitaxy grown InAs/InGaAlAs/InP quantum dashes designed for the 1.5 mu m range were investigated by microphotoluminescence spectroscopy. The exciton and biexciton emission from a single quantum dash was detected revealing a biexciton binding energy of about 0.4 meV. The dependence of the photoluminescence intensity versus the excitation power density was determined and analyzed using the three level rate equation model, which allowed to confirm that the observed lines originate from the same single quantum dash.

Original language	English
Article number	086104
Number of pages	3
Journal	Journal of Applied Physics
Volume	105
Issue number	8
DOIs	https://doi.org/10.1063/1.3116551
Publication status	Published - 15 Apr 2009

Keywords

aluminium compounds
biexcitons
gallium compounds
III-V semiconductors
indium compounds
molecular beam epitaxial growth
photoluminescence
quantum dots
OPTICAL AMPLIFIERS
DOTS
LASERS

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10.1063/1.3116551

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@article{31fb261aa1d946aa95f7e25f4eaa9c81,

title = "Exciton and biexciton emission from a single InAs/InP quantum dash",

abstract = "Molecular beam epitaxy grown InAs/InGaAlAs/InP quantum dashes designed for the 1.5 mu m range were investigated by microphotoluminescence spectroscopy. The exciton and biexciton emission from a single quantum dash was detected revealing a biexciton binding energy of about 0.4 meV. The dependence of the photoluminescence intensity versus the excitation power density was determined and analyzed using the three level rate equation model, which allowed to confirm that the observed lines originate from the same single quantum dash.",

keywords = "aluminium compounds, biexcitons, gallium compounds, III-V semiconductors, indium compounds, molecular beam epitaxial growth, photoluminescence, quantum dots, OPTICAL AMPLIFIERS, DOTS, LASERS",

author = "G. Sek and P. Podemski and A. Musial and J. Misiewicz and S. Hein and Sven H{\"o}fling and A. Forchel",

year = "2009",

month = apr,

day = "15",

doi = "10.1063/1.3116551",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

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TY - JOUR

T1 - Exciton and biexciton emission from a single InAs/InP quantum dash

AU - Sek, G.

AU - Podemski, P.

AU - Musial, A.

AU - Misiewicz, J.

AU - Hein, S.

AU - Höfling, Sven

AU - Forchel, A.

PY - 2009/4/15

Y1 - 2009/4/15

N2 - Molecular beam epitaxy grown InAs/InGaAlAs/InP quantum dashes designed for the 1.5 mu m range were investigated by microphotoluminescence spectroscopy. The exciton and biexciton emission from a single quantum dash was detected revealing a biexciton binding energy of about 0.4 meV. The dependence of the photoluminescence intensity versus the excitation power density was determined and analyzed using the three level rate equation model, which allowed to confirm that the observed lines originate from the same single quantum dash.

AB - Molecular beam epitaxy grown InAs/InGaAlAs/InP quantum dashes designed for the 1.5 mu m range were investigated by microphotoluminescence spectroscopy. The exciton and biexciton emission from a single quantum dash was detected revealing a biexciton binding energy of about 0.4 meV. The dependence of the photoluminescence intensity versus the excitation power density was determined and analyzed using the three level rate equation model, which allowed to confirm that the observed lines originate from the same single quantum dash.

KW - aluminium compounds

KW - biexcitons

KW - gallium compounds

KW - III-V semiconductors

KW - indium compounds

KW - molecular beam epitaxial growth

KW - photoluminescence

KW - quantum dots

KW - OPTICAL AMPLIFIERS

KW - DOTS

KW - LASERS

U2 - 10.1063/1.3116551

DO - 10.1063/1.3116551

M3 - Article

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 086104

ER -

Exciton and biexciton emission from a single InAs/InP quantum dash

Abstract

Keywords

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