Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 mu m

L. Dusanowski, M. Syperek*, W. Rudno-Rudzinski, P. Mrowinski, G. Sek, J. Misiewicz, A. Somers, J. P. Reithmaier, S. Hoefling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

Exciton and biexciton dynamics in a single self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dash emitting near 1.55 mu m has been investigated by micro-photoluminescence and time-resolved micro-photoluminescence at T = 4.2 K. The exciton and biexciton fine structure splitting of similar to 60 mu eV, the biexciton binding energy of similar to 3.5 meV, and the characteristic exciton and biexciton decay times of 2.0 +/- 0.1 ns and 1.1 +/- 0.1 ns, respectively, have been determined. The measurement of the biexciton and exciton cross-correlation statistics of the photon emission confirmed the cascaded relaxation process. The exciton-to-biexciton decay time ratio and a small fine structure splitting suggest carrier localization within the investigated quantum dash. (C) 2013 AIP Publishing LLC.

Original languageEnglish
Article number253113
Number of pages5
JournalApplied Physics Letters
Volume103
Issue number25
DOIs
Publication statusPublished - 16 Dec 2013

Keywords

  • OPTICAL AMPLIFIERS
  • LASERS
  • INAS
  • BAND
  • INP
  • DOT
  • INSB

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