Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 mu m

L. Dusanowski; M. Syperek; W. Rudno-Rudzinski; P. Mrowinski; G. Sek; J. Misiewicz; A. Somers; J. P. Reithmaier; S. Hoefling; A. Forchel

doi:10.1063/1.4852736

Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 mu m

L. Dusanowski, M. Syperek^*, W. Rudno-Rudzinski, P. Mrowinski, G. Sek, J. Misiewicz, A. Somers, J. P. Reithmaier, S. Hoefling, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Exciton and biexciton dynamics in a single self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dash emitting near 1.55 mu m has been investigated by micro-photoluminescence and time-resolved micro-photoluminescence at T = 4.2 K. The exciton and biexciton fine structure splitting of similar to 60 mu eV, the biexciton binding energy of similar to 3.5 meV, and the characteristic exciton and biexciton decay times of 2.0 +/- 0.1 ns and 1.1 +/- 0.1 ns, respectively, have been determined. The measurement of the biexciton and exciton cross-correlation statistics of the photon emission confirmed the cascaded relaxation process. The exciton-to-biexciton decay time ratio and a small fine structure splitting suggest carrier localization within the investigated quantum dash. (C) 2013 AIP Publishing LLC.

Original language	English
Article number	253113
Number of pages	5
Journal	Applied Physics Letters
Volume	103
Issue number	25
DOIs	https://doi.org/10.1063/1.4852736
Publication status	Published - 16 Dec 2013

Keywords

OPTICAL AMPLIFIERS
LASERS
INAS
BAND
INP
DOT
INSB

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10.1063/1.4852736

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@article{e7f55e9b9eb9451590b27affc6dec9d3,

title = "Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 mu m",

abstract = "Exciton and biexciton dynamics in a single self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dash emitting near 1.55 mu m has been investigated by micro-photoluminescence and time-resolved micro-photoluminescence at T = 4.2 K. The exciton and biexciton fine structure splitting of similar to 60 mu eV, the biexciton binding energy of similar to 3.5 meV, and the characteristic exciton and biexciton decay times of 2.0 +/- 0.1 ns and 1.1 +/- 0.1 ns, respectively, have been determined. The measurement of the biexciton and exciton cross-correlation statistics of the photon emission confirmed the cascaded relaxation process. The exciton-to-biexciton decay time ratio and a small fine structure splitting suggest carrier localization within the investigated quantum dash. (C) 2013 AIP Publishing LLC.",

keywords = "OPTICAL AMPLIFIERS, LASERS, INAS, BAND, INP, DOT, INSB",

author = "L. Dusanowski and M. Syperek and W. Rudno-Rudzinski and P. Mrowinski and G. Sek and J. Misiewicz and A. Somers and Reithmaier, {J. P.} and S. Hoefling and A. Forchel",

year = "2013",

month = dec,

day = "16",

doi = "10.1063/1.4852736",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 mu m

AU - Dusanowski, L.

AU - Syperek, M.

AU - Rudno-Rudzinski, W.

AU - Mrowinski, P.

AU - Sek, G.

AU - Misiewicz, J.

AU - Somers, A.

AU - Reithmaier, J. P.

AU - Hoefling, S.

AU - Forchel, A.

PY - 2013/12/16

Y1 - 2013/12/16

N2 - Exciton and biexciton dynamics in a single self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dash emitting near 1.55 mu m has been investigated by micro-photoluminescence and time-resolved micro-photoluminescence at T = 4.2 K. The exciton and biexciton fine structure splitting of similar to 60 mu eV, the biexciton binding energy of similar to 3.5 meV, and the characteristic exciton and biexciton decay times of 2.0 +/- 0.1 ns and 1.1 +/- 0.1 ns, respectively, have been determined. The measurement of the biexciton and exciton cross-correlation statistics of the photon emission confirmed the cascaded relaxation process. The exciton-to-biexciton decay time ratio and a small fine structure splitting suggest carrier localization within the investigated quantum dash. (C) 2013 AIP Publishing LLC.

AB - Exciton and biexciton dynamics in a single self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dash emitting near 1.55 mu m has been investigated by micro-photoluminescence and time-resolved micro-photoluminescence at T = 4.2 K. The exciton and biexciton fine structure splitting of similar to 60 mu eV, the biexciton binding energy of similar to 3.5 meV, and the characteristic exciton and biexciton decay times of 2.0 +/- 0.1 ns and 1.1 +/- 0.1 ns, respectively, have been determined. The measurement of the biexciton and exciton cross-correlation statistics of the photon emission confirmed the cascaded relaxation process. The exciton-to-biexciton decay time ratio and a small fine structure splitting suggest carrier localization within the investigated quantum dash. (C) 2013 AIP Publishing LLC.

KW - OPTICAL AMPLIFIERS

KW - LASERS

KW - INAS

KW - BAND

KW - INP

KW - DOT

KW - INSB

U2 - 10.1063/1.4852736

DO - 10.1063/1.4852736

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253113

ER -

Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 mu m

Abstract

Keywords

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