TY - GEN
T1 - Excimer laser microstructuring of amorphous silicon films for electron field emission applications
AU - Fan, Y.
AU - Rose, M. J.
AU - Persheyev, S. K.
AU - Shaikh, M. Z.
PY - 2009
Y1 - 2009
N2 - The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/μm and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.
AB - The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/μm and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.
KW - Electron field emission
KW - Excimer laser microstructuring
KW - Hydrogenated amorphous silicon films
UR - http://www.scopus.com/inward/record.url?scp=70350491382&partnerID=8YFLogxK
U2 - 10.1109/SOPO.2009.5230293
DO - 10.1109/SOPO.2009.5230293
M3 - Conference contribution
AN - SCOPUS:70350491382
SN - 9781424444113
T3 - 2009 Symposium on Photonics and Optoelectronics, SOPO 2009
BT - 2009 Symposium on Photonics and Optoelectronics, SOPO 2009
T2 - 2009 Symposium on Photonics and Optoelectronics, SOPO 2009
Y2 - 14 August 2009 through 16 August 2009
ER -