Abstract
Excellent photovoltaic performance is predicted in a pentagonal covalent network of Si in a hollow structure exhibiting both thermal and dynamical stability. Consisting of a combination of sp2 and sp3 hybridized Si atomic orbitals, the GW0 computed band structure shows an indirect band gap near the zone edge and also a manifold of directly absorbing transitions at frequencies in the window of visible light, in distinction with conventional Si. Hydrogenation of a single sp2 site is predicted to lead to a robust local magnetic moment. We find a low formation energy at low pressure that is compatible with other experimentally known phases, suggesting that a stable phase might be obtained.
Original language | English |
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Pages (from-to) | 4287-4291 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 21 |
Issue number | 10 |
DOIs | |
Publication status | Published - 11 May 2021 |
Keywords
- DFT
- Doping
- GW0
- Magnetic moment
- Radiation absorption
- Silicon