Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy

Yoshiko Nanao*, Chiara Bigi, Akhil Rajan, G Vinai, D Dagur, Phil King

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


AgCrSe2 exhibits remarkably high ionic conduction, an inversion symmetry-breaking structural transition, and is host to complex non-colinear magnetic orders. Despite its attractive physical and chemical properties, and its potential for technological applications, studies of this compound to date are focused almost exclusively on bulk samples. Here, we report the growth of AgCrSe2 thin films via molecular beam epitaxy. Single-orientated epitaxial growth was confirmed by X-ray diffraction, while resonant photoemission spectroscopy measurements indicate a consistent electronic structure as compared to bulk single crystals. We further demonstrate significant flexibility of the grain morphology and cation stoichiometry of this compound via control of the growth parameters, paving the way for the targeted engineering of the electronic and chemical properties of AgCrSe2 in thin-film form.
Original languageEnglish
Article number045303
Number of pages7
JournalJournal of Applied Physics
Issue number4
Early online date25 Jan 2024
Publication statusPublished - 28 Jan 2024


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