Enhanced tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of magnetic field

D. Barrionuevo*, Le Zhang, N. Ortega, A. Sokolov, A. Kumar, J. F. Scott, R. S. Katiyar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We report an enhancement of tunneling electroresistance (TER) in the presence of magnetic field for 7-nm PbZr0.52Ti0.48O3 (PZT) ferroelectric tunnel barriers sandwiched between platinum metal (Pt) and ferromagnetic La0.67Sr0.33MnO3 (LSMO) layers. The significant variation in TER was observed when Pt/PZT/LSMO junction was exposed to magnetic field and its values at zero bias changed from 57 (at 0 G) to 110 under 10 kG of magnetic field. We attributed this enhancement to change in resistance near the PZT/LSMO interface under magnetic field. Ferroelectric polarization reversal and application of magnetic field changed lattice strain, chemical bonding and charge modulation near PZT/LSMO interface which in turn affects the charge carrier density and transmission probability. Our results suggest the possibility to manipulate TER by magnetic field in ferroelectric tunnel junctions. These results should lead to performance improvement in the devices based on nano-scale ferroelectrics in quantum nanostructures, with application to low energy memories and logic devices.

Original languageEnglish
Pages (from-to)174-185
Number of pages12
JournalIntegrated Ferroelectrics
Volume174
Issue number1
Early online date13 Jul 2016
DOIs
Publication statusPublished - 2016

Keywords

  • Ferroelectric polarization
  • Ferroelectric tunnel junction
  • Tunneling electroresistance

Fingerprint

Dive into the research topics of 'Enhanced tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of magnetic field'. Together they form a unique fingerprint.

Cite this