Enhanced tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of magnetic field

D. Barrionuevo; Le Zhang; N. Ortega; A. Sokolov; A. Kumar; J. F. Scott; R. S. Katiyar

doi:10.1080/10584587.2016.1196053

Enhanced tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of magnetic field

D. Barrionuevo^*, Le Zhang, N. Ortega, A. Sokolov, A. Kumar, J. F. Scott, R. S. Katiyar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report an enhancement of tunneling electroresistance (TER) in the presence of magnetic field for 7-nm PbZr_0.52Ti_0.48O₃ (PZT) ferroelectric tunnel barriers sandwiched between platinum metal (Pt) and ferromagnetic La_0.67Sr_0.33MnO₃ (LSMO) layers. The significant variation in TER was observed when Pt/PZT/LSMO junction was exposed to magnetic field and its values at zero bias changed from 57 (at 0 G) to 110 under 10 kG of magnetic field. We attributed this enhancement to change in resistance near the PZT/LSMO interface under magnetic field. Ferroelectric polarization reversal and application of magnetic field changed lattice strain, chemical bonding and charge modulation near PZT/LSMO interface which in turn affects the charge carrier density and transmission probability. Our results suggest the possibility to manipulate TER by magnetic field in ferroelectric tunnel junctions. These results should lead to performance improvement in the devices based on nano-scale ferroelectrics in quantum nanostructures, with application to low energy memories and logic devices.

Original language	English
Pages (from-to)	174-185
Number of pages	12
Journal	Integrated Ferroelectrics
Volume	174
Issue number	1
Early online date	13 Jul 2016
DOIs	https://doi.org/10.1080/10584587.2016.1196053
Publication status	Published - 2016

Keywords

Ferroelectric polarization
Ferroelectric tunnel junction
Tunneling electroresistance

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10.1080/10584587.2016.1196053

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@article{833e5ca3253c4342bd1e0cb0c676dd7b,

title = "Enhanced tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of magnetic field",

abstract = "We report an enhancement of tunneling electroresistance (TER) in the presence of magnetic field for 7-nm PbZr0.52Ti0.48O3 (PZT) ferroelectric tunnel barriers sandwiched between platinum metal (Pt) and ferromagnetic La0.67Sr0.33MnO3 (LSMO) layers. The significant variation in TER was observed when Pt/PZT/LSMO junction was exposed to magnetic field and its values at zero bias changed from 57 (at 0 G) to 110 under 10 kG of magnetic field. We attributed this enhancement to change in resistance near the PZT/LSMO interface under magnetic field. Ferroelectric polarization reversal and application of magnetic field changed lattice strain, chemical bonding and charge modulation near PZT/LSMO interface which in turn affects the charge carrier density and transmission probability. Our results suggest the possibility to manipulate TER by magnetic field in ferroelectric tunnel junctions. These results should lead to performance improvement in the devices based on nano-scale ferroelectrics in quantum nanostructures, with application to low energy memories and logic devices.",

keywords = "Ferroelectric polarization, Ferroelectric tunnel junction, Tunneling electroresistance",

author = "D. Barrionuevo and Le Zhang and N. Ortega and A. Sokolov and A. Kumar and Scott, {J. F.} and Katiyar, {R. S.}",

note = "This work was supported by IFN-NSF Grant NSF-RII-1002410. N. Ortega is grateful to DOE for financial assistance underDE-FGD2-08ER46526 grant. A. Sokolov and Le Zhang were supported through Materials Research Science and Engineering Center (NSF Grant No. 0820521) and NSF DMR No. 1310542.",

year = "2016",

doi = "10.1080/10584587.2016.1196053",

language = "English",

volume = "174",

pages = "174--185",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis",

number = "1",

}

TY - JOUR

T1 - Enhanced tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of magnetic field

AU - Barrionuevo, D.

AU - Zhang, Le

AU - Ortega, N.

AU - Sokolov, A.

AU - Kumar, A.

AU - Scott, J. F.

AU - Katiyar, R. S.

N1 - This work was supported by IFN-NSF Grant NSF-RII-1002410. N. Ortega is grateful to DOE for financial assistance underDE-FGD2-08ER46526 grant. A. Sokolov and Le Zhang were supported through Materials Research Science and Engineering Center (NSF Grant No. 0820521) and NSF DMR No. 1310542.

PY - 2016

Y1 - 2016

N2 - We report an enhancement of tunneling electroresistance (TER) in the presence of magnetic field for 7-nm PbZr0.52Ti0.48O3 (PZT) ferroelectric tunnel barriers sandwiched between platinum metal (Pt) and ferromagnetic La0.67Sr0.33MnO3 (LSMO) layers. The significant variation in TER was observed when Pt/PZT/LSMO junction was exposed to magnetic field and its values at zero bias changed from 57 (at 0 G) to 110 under 10 kG of magnetic field. We attributed this enhancement to change in resistance near the PZT/LSMO interface under magnetic field. Ferroelectric polarization reversal and application of magnetic field changed lattice strain, chemical bonding and charge modulation near PZT/LSMO interface which in turn affects the charge carrier density and transmission probability. Our results suggest the possibility to manipulate TER by magnetic field in ferroelectric tunnel junctions. These results should lead to performance improvement in the devices based on nano-scale ferroelectrics in quantum nanostructures, with application to low energy memories and logic devices.

AB - We report an enhancement of tunneling electroresistance (TER) in the presence of magnetic field for 7-nm PbZr0.52Ti0.48O3 (PZT) ferroelectric tunnel barriers sandwiched between platinum metal (Pt) and ferromagnetic La0.67Sr0.33MnO3 (LSMO) layers. The significant variation in TER was observed when Pt/PZT/LSMO junction was exposed to magnetic field and its values at zero bias changed from 57 (at 0 G) to 110 under 10 kG of magnetic field. We attributed this enhancement to change in resistance near the PZT/LSMO interface under magnetic field. Ferroelectric polarization reversal and application of magnetic field changed lattice strain, chemical bonding and charge modulation near PZT/LSMO interface which in turn affects the charge carrier density and transmission probability. Our results suggest the possibility to manipulate TER by magnetic field in ferroelectric tunnel junctions. These results should lead to performance improvement in the devices based on nano-scale ferroelectrics in quantum nanostructures, with application to low energy memories and logic devices.

KW - Ferroelectric polarization

KW - Ferroelectric tunnel junction

KW - Tunneling electroresistance

UR - http://www.scopus.com/inward/record.url?scp=84978402085&partnerID=8YFLogxK

U2 - 10.1080/10584587.2016.1196053

DO - 10.1080/10584587.2016.1196053

M3 - Article

AN - SCOPUS:84978402085

SN - 1058-4587

VL - 174

SP - 174

EP - 185

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

ER -

Enhanced tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of magnetic field

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