Abstract
Exciton-longitudinal optic-phonon coupling in InAs/GaAs quantum dots is investigated by means of single-dot spectroscopy. Photoluminescence spectra in the excitonic ground-state region exhibit a series of new emission lines which we ascribe to single exciton recombination perturbed by charged defects close to the dot. Compared to unperturbed excitonic recombination, the resulting dipole in these complexes leads to enhanced coupling to LO phonons in photoluminescence excitation spectra. Evidence for resonant enhancement of phonon-assisted processes ill absorption is also presented.
Original language | English |
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Pages (from-to) | 161309 |
Number of pages | 4 |
Journal | Physical Review. B, Condensed matter and materials physics |
Volume | 63 |
Issue number | 16 |
DOIs | |
Publication status | Published - 15 Apr 2001 |
Keywords
- SEMICONDUCTOR MICROCRYSTALLITES
- ENERGY RELAXATION
- PHOTOLUMINESCENCE
- STATES