Enhanced 1.54 mu m emission in Y-Er disilicate thin films on silicon photonic crystal cavities

R. Lo Savio*, M. Miritello, A. Shakoor, P. Cardile, K. Welna, L. C. Andreani, D. Gerace, T. F. Krauss, L. O'Faolain, F. Priolo, M. Galli

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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We introduce an Y-Er disilicate thin film deposited on top of a silicon photonic crystal cavity as a gain medium for active silicon photonic devices. Using photoluminescence analysis, we demonstrate that Er luminescence at 1.54 mu m is enhanced by coupling with the cavity modes, and that the directionality of the Er optical emission can be controlled through far-field optimization of the cavity. We determine the maximum excitation power that can be coupled into the cavity to be 12 mW, which is limited by free carrier absorption and thermal heating. At maximum excitation, we observe that nearly 30% of the Er population is in the excited state, as estimated from the direct measurement of the emitted power. Finally, using time-resolved photoluminescence measurements, we determine a value of 2.3 for the Purcell factor of the system at room temperature. These results indicate that overcoating a silicon photonic nanostructure with an Er-rich dielectric layer is a promising method for achieving light emission at 1.54 mu m wavelength on a silicon platform.

Original languageEnglish
Pages (from-to)10278-10288
Number of pages11
JournalOptics Express
Issue number8
Publication statusPublished - 22 Apr 2013


  • Light-emitting diode
  • Room-temperature
  • Wave guides
  • Energy transfer
  • Quality factor
  • Up-conversion
  • Optical gain
  • Erbium
  • Luminescence
  • Nanocavity


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