Energy band diagram of device-grade silicon nanocrystals

M Macias-Montero; S Askari; S Mitra; C Rocks; Chengsheng Ni; V Svrcek; Paul Alexander Connor; P Maguire; John Thomas Sirr Irvine; D Mariotti

doi:10.1039/c5nr07705b

Energy band diagram of device-grade silicon nanocrystals

M Macias-Montero, S Askari, S Mitra, C Rocks, Chengsheng Ni, V Svrcek, Paul Alexander Connor, P Maguire, John Thomas Sirr Irvine, D Mariotti

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Abstract

Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

Original language	English
Pages (from-to)	6623-8
Number of pages	6
Journal	Nanoscale
Volume	8
Issue number	12
DOIs	https://doi.org/10.1039/c5nr07705b
Publication status	Published - 17 Mar 2016

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Irvine_2016_Nanoscale_Energy_CCBY
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Cite this

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title = "Energy band diagram of device-grade silicon nanocrystals",

abstract = "Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.",

author = "M Macias-Montero and S Askari and S Mitra and C Rocks and Chengsheng Ni and V Svrcek and Connor, {Paul Alexander} and P Maguire and Irvine, {John Thomas Sirr} and D Mariotti",

note = "This work was supported by the EPSRC (EP/K022237/1) and the Leverhulme International Network (IN-2012-136). SA would like to acknowledge the support of the Ulster University Vice-Chancellor's Research Studentship and CR that of the NI-DEL studentship.",

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doi = "10.1039/c5nr07705b",

language = "English",

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pages = "6623--8",

journal = "Nanoscale",

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T1 - Energy band diagram of device-grade silicon nanocrystals

AU - Macias-Montero, M

AU - Askari, S

AU - Mitra, S

AU - Rocks, C

AU - Ni, Chengsheng

AU - Svrcek, V

AU - Connor, Paul Alexander

AU - Maguire, P

AU - Irvine, John Thomas Sirr

AU - Mariotti, D

N1 - This work was supported by the EPSRC (EP/K022237/1) and the Leverhulme International Network (IN-2012-136). SA would like to acknowledge the support of the Ulster University Vice-Chancellor's Research Studentship and CR that of the NI-DEL studentship.

PY - 2016/3/17

Y1 - 2016/3/17

N2 - Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

AB - Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

UR - http://www.rsc.org/suppdata/c5/nr/c5nr07705b/c5nr07705b1.pdf

U2 - 10.1039/c5nr07705b

DO - 10.1039/c5nr07705b

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SN - 2040-3364

VL - 8

SP - 6623

EP - 6628

JO - Nanoscale

JF - Nanoscale

IS - 12

ER -

Energy band diagram of device-grade silicon nanocrystals

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Energy band diagram of device-grade silicon nanocrystals

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