Electron field emission display based on AIC-PECVD thin silicon films

M. Z. Shamim, S. K. Persheyev, M. J. Rose

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Hydrogenated amorphous thin silicon films (a-Si:H) deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) on metal coated glass substrates were investigated to determine the effect of Aluminium Induced Crystallization (AIC) on their Electron Field Emission (FE) properties. Pre and post-surface characterization of the processed AIC-PECVD thin silicon films showed increased surface roughness and the presence of uniformly spaced 'islandlike' micro/nano crystallites on the surface of both chromium (Cr) and molybdenum (Mo) backplane samples. Best FE results were obtained from a-Si:H sputtered with a thin layer of aluminum (Al) on top and isothermally annealed at 350 °C. FE currents were measured upto above 10-6 A at emission thresholds of 35-60 V/μm. FE results of the AIC-PECVD thin silicon films were found to be particularly dependent on backplane material and independent of the annealing temperature. Diode configuration field emission measurements have been conducted using an ANODE plate coated with indium tin-oxide (ITO) and phosphor to observe the light emission.

Original languageEnglish
Title of host publicationProceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016
EditorsS. Smys
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781467378079
ISBN (Print)9781467378086
DOIs
Publication statusPublished - 31 Oct 2016
Event10th International Conference on Intelligent Systems and Control, ISCO 2016 - Coimbatore, India
Duration: 7 Jan 20168 Jan 2016

Publication series

NameProceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016

Conference

Conference10th International Conference on Intelligent Systems and Control, ISCO 2016
Country/TerritoryIndia
CityCoimbatore
Period7/01/168/01/16

Keywords

  • Hydrogenated amorphous silicon
  • Plasma enhanced chemical vapour deposition
  • Aluminium induced crystallization
  • Surface characterization
  • Electron field emission display

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