Electron field emission display based on AIC-PECVD thin silicon films

M. Z. Shamim; S. K. Persheyev; M. J. Rose

doi:10.1109/ISCO.2016.7727068

Electron field emission display based on AIC-PECVD thin silicon films

M. Z. Shamim, S. K. Persheyev, M. J. Rose

School of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Hydrogenated amorphous thin silicon films (a-Si:H) deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) on metal coated glass substrates were investigated to determine the effect of Aluminium Induced Crystallization (AIC) on their Electron Field Emission (FE) properties. Pre and post-surface characterization of the processed AIC-PECVD thin silicon films showed increased surface roughness and the presence of uniformly spaced 'islandlike' micro/nano crystallites on the surface of both chromium (Cr) and molybdenum (Mo) backplane samples. Best FE results were obtained from a-Si:H sputtered with a thin layer of aluminum (Al) on top and isothermally annealed at 350 °C. FE currents were measured upto above 10^-6 A at emission thresholds of 35-60 V/μm. FE results of the AIC-PECVD thin silicon films were found to be particularly dependent on backplane material and independent of the annealing temperature. Diode configuration field emission measurements have been conducted using an ANODE plate coated with indium tin-oxide (ITO) and phosphor to observe the light emission.

Original language	English
Title of host publication	Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016
Editors	S. Smys
Publisher	Institute of Electrical and Electronics Engineers Inc.
Number of pages	5
ISBN (Electronic)	9781467378079
ISBN (Print)	9781467378086
DOIs	https://doi.org/10.1109/ISCO.2016.7727068
Publication status	Published - 31 Oct 2016
Event	10th International Conference on Intelligent Systems and Control, ISCO 2016 - Coimbatore, India Duration: 7 Jan 2016 → 8 Jan 2016

Publication series

Name	Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016

Conference

Conference	10th International Conference on Intelligent Systems and Control, ISCO 2016
Country/Territory	India
City	Coimbatore
Period	7/01/16 → 8/01/16

Keywords

Hydrogenated amorphous silicon
Plasma enhanced chemical vapour deposition
Aluminium induced crystallization
Surface characterization
Electron field emission display

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10.1109/ISCO.2016.7727068

Cite this

Shamim, M. Z., Persheyev, S. K., & Rose, M. J. (2016). Electron field emission display based on AIC-PECVD thin silicon films. In S. Smys (Ed.), Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016 Article 7727068 (Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCO.2016.7727068

Shamim, M. Z. ; Persheyev, S. K. ; Rose, M. J. / Electron field emission display based on AIC-PECVD thin silicon films. Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016. editor / S. Smys. Institute of Electrical and Electronics Engineers Inc., 2016. (Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016).

@inproceedings{47a10d8ad93547c3a6ced5da37148917,

title = "Electron field emission display based on AIC-PECVD thin silicon films",

abstract = "Hydrogenated amorphous thin silicon films (a-Si:H) deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) on metal coated glass substrates were investigated to determine the effect of Aluminium Induced Crystallization (AIC) on their Electron Field Emission (FE) properties. Pre and post-surface characterization of the processed AIC-PECVD thin silicon films showed increased surface roughness and the presence of uniformly spaced 'islandlike' micro/nano crystallites on the surface of both chromium (Cr) and molybdenum (Mo) backplane samples. Best FE results were obtained from a-Si:H sputtered with a thin layer of aluminum (Al) on top and isothermally annealed at 350 °C. FE currents were measured upto above 10-6 A at emission thresholds of 35-60 V/μm. FE results of the AIC-PECVD thin silicon films were found to be particularly dependent on backplane material and independent of the annealing temperature. Diode configuration field emission measurements have been conducted using an ANODE plate coated with indium tin-oxide (ITO) and phosphor to observe the light emission.",

keywords = "Hydrogenated amorphous silicon, Plasma enhanced chemical vapour deposition, Aluminium induced crystallization, Surface characterization, Electron field emission display",

author = "Shamim, {M. Z.} and Persheyev, {S. K.} and Rose, {M. J.}",

year = "2016",

month = oct,

day = "31",

doi = "10.1109/ISCO.2016.7727068",

language = "English",

isbn = "9781467378086",

series = "Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "S. Smys",

booktitle = "Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016",

address = "United States",

note = "10th International Conference on Intelligent Systems and Control, ISCO 2016 ; Conference date: 07-01-2016 Through 08-01-2016",

}

Shamim, MZ, Persheyev, SK & Rose, MJ 2016, Electron field emission display based on AIC-PECVD thin silicon films. in S Smys (ed.), Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016., 7727068, Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016, Institute of Electrical and Electronics Engineers Inc., 10th International Conference on Intelligent Systems and Control, ISCO 2016, Coimbatore, India, 7/01/16. https://doi.org/10.1109/ISCO.2016.7727068

Electron field emission display based on AIC-PECVD thin silicon films. / Shamim, M. Z.; Persheyev, S. K.; Rose, M. J.
Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016. ed. / S. Smys. Institute of Electrical and Electronics Engineers Inc., 2016. 7727068 (Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Electron field emission display based on AIC-PECVD thin silicon films

AU - Shamim, M. Z.

AU - Persheyev, S. K.

AU - Rose, M. J.

PY - 2016/10/31

Y1 - 2016/10/31

N2 - Hydrogenated amorphous thin silicon films (a-Si:H) deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) on metal coated glass substrates were investigated to determine the effect of Aluminium Induced Crystallization (AIC) on their Electron Field Emission (FE) properties. Pre and post-surface characterization of the processed AIC-PECVD thin silicon films showed increased surface roughness and the presence of uniformly spaced 'islandlike' micro/nano crystallites on the surface of both chromium (Cr) and molybdenum (Mo) backplane samples. Best FE results were obtained from a-Si:H sputtered with a thin layer of aluminum (Al) on top and isothermally annealed at 350 °C. FE currents were measured upto above 10-6 A at emission thresholds of 35-60 V/μm. FE results of the AIC-PECVD thin silicon films were found to be particularly dependent on backplane material and independent of the annealing temperature. Diode configuration field emission measurements have been conducted using an ANODE plate coated with indium tin-oxide (ITO) and phosphor to observe the light emission.

AB - Hydrogenated amorphous thin silicon films (a-Si:H) deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) on metal coated glass substrates were investigated to determine the effect of Aluminium Induced Crystallization (AIC) on their Electron Field Emission (FE) properties. Pre and post-surface characterization of the processed AIC-PECVD thin silicon films showed increased surface roughness and the presence of uniformly spaced 'islandlike' micro/nano crystallites on the surface of both chromium (Cr) and molybdenum (Mo) backplane samples. Best FE results were obtained from a-Si:H sputtered with a thin layer of aluminum (Al) on top and isothermally annealed at 350 °C. FE currents were measured upto above 10-6 A at emission thresholds of 35-60 V/μm. FE results of the AIC-PECVD thin silicon films were found to be particularly dependent on backplane material and independent of the annealing temperature. Diode configuration field emission measurements have been conducted using an ANODE plate coated with indium tin-oxide (ITO) and phosphor to observe the light emission.

KW - Hydrogenated amorphous silicon

KW - Plasma enhanced chemical vapour deposition

KW - Aluminium induced crystallization

KW - Surface characterization

KW - Electron field emission display

U2 - 10.1109/ISCO.2016.7727068

DO - 10.1109/ISCO.2016.7727068

M3 - Conference contribution

AN - SCOPUS:85007398592

SN - 9781467378086

T3 - Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016

BT - Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016

A2 - Smys, S.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 10th International Conference on Intelligent Systems and Control, ISCO 2016

Y2 - 7 January 2016 through 8 January 2016

ER -

Shamim MZ, Persheyev SK, Rose MJ. Electron field emission display based on AIC-PECVD thin silicon films. In Smys S, editor, Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7727068. (Proceedings of the 10th International Conference on Intelligent Systems and Control, ISCO 2016). doi: 10.1109/ISCO.2016.7727068

Electron field emission display based on AIC-PECVD thin silicon films

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