Electroluminescence on-off ratio control off n−i−n GaAs/AlGaAs-based resonant tunneling structures

We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current changes from higher to lower values and the EL on-off ratio is enhanced by two orders of magnitude compared to the current on-off ratio. By combining the EL and the current properties, we are able to identify two independent impact ionization channels associated with the coherent resonant tunneling current and the incoherent valley current. We also perform the same investigation with an associated series resistance, which induces a bistable electrical output in the system. By simulating a resistance variation for the current voltage and the EL, we are able to tune the EL on-off ratio by up to six orders of magnitude. We further observe that the EL on and off states can be either direct or inverted compared to the tunneling current of the on and off states. This electroluminescence, combined with the unique RTD properties, such as the negative differential resistance and high-frequency operation, enables the development of high-speed functional optoelectronic devices and optical switches.