Electro-optic modulation in bulk silicon using surface plasmon resonance

Kapil Debnath; Pedro Damas; Liam O'Faolain

doi:10.1016/j.photonics.2015.11.002

Electro-optic modulation in bulk silicon using surface plasmon resonance

Kapil Debnath, Pedro Damas, Liam O'Faolain^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We propose and present simulated results for a new design of an optical modulator based on Surface Plasmon Polariton (SPP) resonance. The modulator is realized on a bulk silicon substrate, thus offering an opportunity for front-end integration with electronic circuits. The device consists of a dielectric waveguide evanescently coupled to a SPP mode at the interface between bulk silicon and metal. By using SPP resonance we achieved an ultra-high spectral sensitivity (∼5000 nm/refractive index unit) with large modulation bandwidth (90 nm). For a refractive index change of 0.02, we achieved 100 nm shift in resonance wavelength and a modulation depth of ∼10 dB.

Original language	English
Pages (from-to)	31-35
Number of pages	5
Journal	Photonics and Nanostructures : Fundamentals and Applications
Volume	18
Early online date	10 Dec 2015
DOIs	https://doi.org/10.1016/j.photonics.2015.11.002
Publication status	Published - 1 Jan 2016

Keywords

Surface plasmons
Integrated optoelectronic circuits
Modulators
Silicon photonics

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10.1016/j.photonics.2015.11.002

O'Faolain_2016_PNFA_Electro_AAM
Copyright © 2016 Elsevier B.V. All rights reserved.This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://dx.doi.org/10.1016/j.photonics.2015.11.002
Accepted author manuscript, 529 KB

Cite this

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title = "Electro-optic modulation in bulk silicon using surface plasmon resonance",

abstract = "We propose and present simulated results for a new design of an optical modulator based on Surface Plasmon Polariton (SPP) resonance. The modulator is realized on a bulk silicon substrate, thus offering an opportunity for front-end integration with electronic circuits. The device consists of a dielectric waveguide evanescently coupled to a SPP mode at the interface between bulk silicon and metal. By using SPP resonance we achieved an ultra-high spectral sensitivity (∼5000 nm/refractive index unit) with large modulation bandwidth (90 nm). For a refractive index change of 0.02, we achieved 100 nm shift in resonance wavelength and a modulation depth of ∼10 dB.",

keywords = "Surface plasmons, Integrated optoelectronic circuits, Modulators, Silicon photonics",

author = "Kapil Debnath and Pedro Damas and Liam O'Faolain",

note = "The authors acknowledge funding from the EPSRC in the UK under the UK Silicon Photonics project.",

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doi = "10.1016/j.photonics.2015.11.002",

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T1 - Electro-optic modulation in bulk silicon using surface plasmon resonance

AU - Debnath, Kapil

AU - Damas, Pedro

AU - O'Faolain, Liam

N1 - The authors acknowledge funding from the EPSRC in the UK under the UK Silicon Photonics project.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We propose and present simulated results for a new design of an optical modulator based on Surface Plasmon Polariton (SPP) resonance. The modulator is realized on a bulk silicon substrate, thus offering an opportunity for front-end integration with electronic circuits. The device consists of a dielectric waveguide evanescently coupled to a SPP mode at the interface between bulk silicon and metal. By using SPP resonance we achieved an ultra-high spectral sensitivity (∼5000 nm/refractive index unit) with large modulation bandwidth (90 nm). For a refractive index change of 0.02, we achieved 100 nm shift in resonance wavelength and a modulation depth of ∼10 dB.

AB - We propose and present simulated results for a new design of an optical modulator based on Surface Plasmon Polariton (SPP) resonance. The modulator is realized on a bulk silicon substrate, thus offering an opportunity for front-end integration with electronic circuits. The device consists of a dielectric waveguide evanescently coupled to a SPP mode at the interface between bulk silicon and metal. By using SPP resonance we achieved an ultra-high spectral sensitivity (∼5000 nm/refractive index unit) with large modulation bandwidth (90 nm). For a refractive index change of 0.02, we achieved 100 nm shift in resonance wavelength and a modulation depth of ∼10 dB.

KW - Surface plasmons

KW - Integrated optoelectronic circuits

KW - Modulators

KW - Silicon photonics

UR - https://www.scopus.com/pages/publications/84957660399

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JO - Photonics and Nanostructures : Fundamentals and Applications

JF - Photonics and Nanostructures : Fundamentals and Applications

ER -

Electro-optic modulation in bulk silicon using surface plasmon resonance

Abstract

Keywords

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UK Silicon Photonics EP/F001622/1: UK Silicon Photonics

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Electro-optic modulation in bulk silicon using surface plasmon resonance

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Projects

UK Silicon Photonics EP/F001622/1: UK Silicon Photonics

Cite this