Electro chemical impedance spectrscopic analysis of Nb2O5 blocking layer in dye sensitised solar cells

S. Suresh; T. G. Deepak; C. Ni; M. Satyanarayana; A. S. Nair; V. P. M. Pillai

doi:10.1109/ICEEOT.2016.7755415

Electro chemical impedance spectrscopic analysis of Nb₂O₅ blocking layer in dye sensitised solar cells

S. Suresh, T. G. Deepak, C. Ni, M. Satyanarayana, A. S. Nair, V. P. M. Pillai

School of Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Back electron transfer can be reduced by inserting an energy barrier layer at the interfaces of a photoanode is an effective method for improving the photovoltaic parameters in dye sensitised solar cells (DSSCs). In this work phase modified Nb₂O₅ blocking layer was inserted at the fluorine doped tin oxide (FTO) /TiO₂ interface by Rf magnetron sputtering process. For a tunnelling distance of ∼40 nm, crystalline Nb₂O₅ blocking layer improved the efficiency close to 7% and outperformed the amorphous blocking layer. Longer electron lifetime in DSSCs having inhomogeneous Nb₂O₅ layer indicates that trapping de-trapping impedes the discharge of electrons to the TiO₂ band edge.

Original language	English
Title of host publication	2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT)
Publisher	IEEE
Pages	3765-3769
Number of pages	5
ISBN (Electronic)	9781467399395
ISBN (Print)	9781467399401
DOIs	https://doi.org/10.1109/ICEEOT.2016.7755415
Publication status	Published - 24 Nov 2016
Event	International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT) - DMI College of Engineering Chennai, Tamil Nadu, India Duration: 3 Mar 2016 → 5 Mar 2016 http://www.iceeot.org/index.html

Conference

Conference	International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT)
Abbreviated title	ICEEOT
Country/Territory	India
City	Tamil Nadu
Period	3/03/16 → 5/03/16
Internet address	http://www.iceeot.org/index.html

Keywords

Blocking layer
Dye sensitised solar cell
Electrchemical impedance
Back electron transfer

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ICEEOT.2016.7755415

Cite this

Suresh, S., Deepak, T. G., Ni, C., Satyanarayana, M., Nair, A. S., & Pillai, V. P. M. (2016). Electro chemical impedance spectrscopic analysis of Nb₂O₅ blocking layer in dye sensitised solar cells. In 2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT) (pp. 3765-3769). Article 7755415 IEEE. https://doi.org/10.1109/ICEEOT.2016.7755415

@inproceedings{cb7e575241b940bcb3dfe2f164bd713d,

title = "Electro chemical impedance spectrscopic analysis of Nb2O5 blocking layer in dye sensitised solar cells",

abstract = "Back electron transfer can be reduced by inserting an energy barrier layer at the interfaces of a photoanode is an effective method for improving the photovoltaic parameters in dye sensitised solar cells (DSSCs). In this work phase modified Nb2O5 blocking layer was inserted at the fluorine doped tin oxide (FTO) /TiO2 interface by Rf magnetron sputtering process. For a tunnelling distance of ∼40 nm, crystalline Nb2O5 blocking layer improved the efficiency close to 7% and outperformed the amorphous blocking layer. Longer electron lifetime in DSSCs having inhomogeneous Nb2O5 layer indicates that trapping de-trapping impedes the discharge of electrons to the TiO2 band edge.",

keywords = "Blocking layer, Dye sensitised solar cell, Electrchemical impedance, Back electron transfer",

author = "S. Suresh and Deepak, {T. G.} and C. Ni and M. Satyanarayana and Nair, {A. S.} and Pillai, {V. P. M.}",

year = "2016",

month = nov,

day = "24",

doi = "10.1109/ICEEOT.2016.7755415",

language = "English",

isbn = "9781467399401",

pages = "3765--3769",

booktitle = "2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT)",

publisher = "IEEE",

note = "International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT), ICEEOT ; Conference date: 03-03-2016 Through 05-03-2016",

url = "http://www.iceeot.org/index.html",

}

Suresh, S, Deepak, TG, Ni, C, Satyanarayana, M, Nair, AS & Pillai, VPM 2016, Electro chemical impedance spectrscopic analysis of Nb₂O₅ blocking layer in dye sensitised solar cells. in 2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT)., 7755415, IEEE, pp. 3765-3769, International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT), Tamil Nadu, India, 3/03/16. https://doi.org/10.1109/ICEEOT.2016.7755415

TY - GEN

T1 - Electro chemical impedance spectrscopic analysis of Nb2O5 blocking layer in dye sensitised solar cells

AU - Suresh, S.

AU - Deepak, T. G.

AU - Ni, C.

AU - Satyanarayana, M.

AU - Nair, A. S.

AU - Pillai, V. P. M.

PY - 2016/11/24

Y1 - 2016/11/24

N2 - Back electron transfer can be reduced by inserting an energy barrier layer at the interfaces of a photoanode is an effective method for improving the photovoltaic parameters in dye sensitised solar cells (DSSCs). In this work phase modified Nb2O5 blocking layer was inserted at the fluorine doped tin oxide (FTO) /TiO2 interface by Rf magnetron sputtering process. For a tunnelling distance of ∼40 nm, crystalline Nb2O5 blocking layer improved the efficiency close to 7% and outperformed the amorphous blocking layer. Longer electron lifetime in DSSCs having inhomogeneous Nb2O5 layer indicates that trapping de-trapping impedes the discharge of electrons to the TiO2 band edge.

AB - Back electron transfer can be reduced by inserting an energy barrier layer at the interfaces of a photoanode is an effective method for improving the photovoltaic parameters in dye sensitised solar cells (DSSCs). In this work phase modified Nb2O5 blocking layer was inserted at the fluorine doped tin oxide (FTO) /TiO2 interface by Rf magnetron sputtering process. For a tunnelling distance of ∼40 nm, crystalline Nb2O5 blocking layer improved the efficiency close to 7% and outperformed the amorphous blocking layer. Longer electron lifetime in DSSCs having inhomogeneous Nb2O5 layer indicates that trapping de-trapping impedes the discharge of electrons to the TiO2 band edge.

KW - Blocking layer

KW - Dye sensitised solar cell

KW - Electrchemical impedance

KW - Back electron transfer

U2 - 10.1109/ICEEOT.2016.7755415

DO - 10.1109/ICEEOT.2016.7755415

M3 - Conference contribution

SN - 9781467399401

SP - 3765

EP - 3769

BT - 2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT)

PB - IEEE

T2 - International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT)

Y2 - 3 March 2016 through 5 March 2016

ER -