Electro chemical impedance spectrscopic analysis of Nb2O5 blocking layer in dye sensitised solar cells

S. Suresh, T. G. Deepak, C. Ni, M. Satyanarayana, A. S. Nair, V. P. M. Pillai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Back electron transfer can be reduced by inserting an energy barrier layer at the interfaces of a photoanode is an effective method for improving the photovoltaic parameters in dye sensitised solar cells (DSSCs). In this work phase modified Nb2O5 blocking layer was inserted at the fluorine doped tin oxide (FTO) /TiO2 interface by Rf magnetron sputtering process. For a tunnelling distance of ∼40 nm, crystalline Nb2O5 blocking layer improved the efficiency close to 7% and outperformed the amorphous blocking layer. Longer electron lifetime in DSSCs having inhomogeneous Nb2O5 layer indicates that trapping de-trapping impedes the discharge of electrons to the TiO2 band edge.
Original languageEnglish
Title of host publication2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT)
PublisherIEEE
Pages3765-3769
Number of pages5
ISBN (Electronic)9781467399395
ISBN (Print)9781467399401
DOIs
Publication statusPublished - 24 Nov 2016
EventInternational Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT) - DMI College of Engineering Chennai, Tamil Nadu, India
Duration: 3 Mar 20165 Mar 2016
http://www.iceeot.org/index.html

Conference

ConferenceInternational Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT)
Abbreviated titleICEEOT
Country/TerritoryIndia
CityTamil Nadu
Period3/03/165/03/16
Internet address

Keywords

  • Blocking layer
  • Dye sensitised solar cell
  • Electrchemical impedance
  • Back electron transfer

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