Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

Mateusz Dyksik, Marcin Motyka, Marcin Kurka, Krzysztof Ryczko, Jan Misiewicz, Anne Schade, Martin Kamp, Sven Höfling, Grzegorz Sęk

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.
Original languageEnglish
Article number110301
Number of pages4
JournalJapanese Journal of Applied Physics
Volume56
Issue number11
DOIs
Publication statusPublished - 29 Sept 2017

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