Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

Mateusz Dyksik; Marcin Motyka; Marcin Kurka; Krzysztof Ryczko; Jan Misiewicz; Anne Schade; Martin Kamp; Sven Höfling; Grzegorz Sęk

doi:10.7567/JJAP.56.110301

Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

Mateusz Dyksik, Marcin Motyka, Marcin Kurka, Krzysztof Ryczko, Jan Misiewicz, Anne Schade, Martin Kamp, Sven Höfling, Grzegorz Sęk

Research output: Contribution to journal › Article › peer-review

Abstract

Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.

Original language	English
Article number	110301
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	56
Issue number	11
DOIs	https://doi.org/10.7567/JJAP.56.110301
Publication status	Published - 29 Sept 2017

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Dyksik_2017_Jpn._J._Appl._Phys._56_110301
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title = "Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers",

abstract = "Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.",

author = "Mateusz Dyksik and Marcin Motyka and Marcin Kurka and Krzysztof Ryczko and Jan Misiewicz and Anne Schade and Martin Kamp and Sven H{\"o}fling and Grzegorz S{\c e}k",

note = "This project has received funding from the European Commission's Horizon 2020 Research and Innovation Programme iCspec under grant agreement No. 636930 and has also been supported by the National Science Centre of Poland within Grant No. 2014/15/B/ST7/04663.",

year = "2017",

month = sep,

day = "29",

doi = "10.7567/JJAP.56.110301",

language = "English",

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TY - JOUR

T1 - Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

AU - Dyksik, Mateusz

AU - Motyka, Marcin

AU - Kurka, Marcin

AU - Ryczko, Krzysztof

AU - Misiewicz, Jan

AU - Schade, Anne

AU - Kamp, Martin

AU - Höfling, Sven

AU - Sęk, Grzegorz

N1 - This project has received funding from the European Commission's Horizon 2020 Research and Innovation Programme iCspec under grant agreement No. 636930 and has also been supported by the National Science Centre of Poland within Grant No. 2014/15/B/ST7/04663.

PY - 2017/9/29

Y1 - 2017/9/29

N2 - Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.

AB - Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.

U2 - 10.7567/JJAP.56.110301

DO - 10.7567/JJAP.56.110301

M3 - Article

SN - 0021-4922

VL - 56

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11

M1 - 110301

ER -

Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

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