Electrical transport and depletion region in dry-etched Si-based nanostructures

P. Cardile*, G. Franzo, Thomas Fraser Krauss, F. Priolo, Liam O'Faolain

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We fabricated p(+)-p-p(+) junctions in order to properly investigate the electrical conduction across a boron implanted silicon-on-insulator (SOI) nanostructured pattern, like photonic crystals and shallow-etched trenches. By analysis of the I-V measurements, we demonstrate that a depletion region is present and it is induced by the dry etching process of reactive ion etching. This depletion region does not depend on the geometry of the dry-etched nanostructure, but on the doping level of the substrate.

Original languageEnglish
Article number045016
Number of pages6
JournalSemiconductor Science and Technology
Volume27
Issue number4
DOIs
Publication statusPublished - Apr 2012

Keywords

  • MODULATOR
  • QUANTUM-DOT
  • PHOTONIC-CRYSTAL NANOCAVITY
  • LASER
  • SILICON
  • WAVE-GUIDES
  • SLOW-LIGHT

Fingerprint

Dive into the research topics of 'Electrical transport and depletion region in dry-etched Si-based nanostructures'. Together they form a unique fingerprint.

Cite this