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Abstract
We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 10(18)/cm(3), are acceptable for practical devices with Q factors as high as 4×10(4).
Original language | English |
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Article number | 203506 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 20 |
DOIs | |
Publication status | Published - May 2011 |
Keywords
- Doping
- Photonic crystals
- Electrical resistivity
- Photonic crystal devices
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Dive into the research topics of 'Electrical conduction and optical properties of doped SOI Photonic Crystals'. Together they form a unique fingerprint.Projects
- 1 Finished
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Lasing of Erbium in Crystalline silicon: Lasing of Erbium in crystalline silicon Photonic Nanostructures - LECSIN
O'Faolain, L. (PI) & Krauss, T. F. (CoI)
25/02/10 → 24/02/13
Project: Standard