Electrical conduction and optical properties of doped SOI Photonic Crystals

Paolo Cardile, Giorgia Franzo, Roberto Lo Savio, Matteo Galli, Thomas Fraser Krauss, Francesco Priolo, Liam O'Faolain

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12 Citations (Scopus)
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Abstract

We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 10(18)/cm(3), are acceptable for practical devices with Q factors as high as 4×10(4).

Original languageEnglish
Article number203506
JournalApplied Physics Letters
Volume98
Issue number20
DOIs
Publication statusPublished - May 2011

Keywords

  • Doping
  • Photonic crystals
  • Electrical resistivity
  • Photonic crystal devices

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