Effect of copper on the carrier lifetime in black silicon

Henrik P. Porte; Dmitry Turchinovich; Saydulla Persheyev; Yongchang Fan; Mervyn J. Rose; Peter Uhd Jepsen

doi:10.1007/s10762-011-9801-x

Effect of copper on the carrier lifetime in black silicon

Henrik P. Porte^*, Dmitry Turchinovich, Saydulla Persheyev, Yongchang Fan, Mervyn J. Rose, Peter Uhd Jepsen

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.

Original language	English
Pages (from-to)	883-886
Number of pages	4
Journal	Journal of Infrared, Millimeter, and Terahertz Waves
Volume	32
Issue number	7
DOIs	https://doi.org/10.1007/s10762-011-9801-x
Publication status	Published - Jul 2011

Access to Document

10.1007/s10762-011-9801-x

Cite this

@article{3828158095404b059b6930a794c95c15,

title = "Effect of copper on the carrier lifetime in black silicon",

abstract = "Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.",

author = "Porte, \{Henrik P.\} and Dmitry Turchinovich and Saydulla Persheyev and Yongchang Fan and Rose, \{Mervyn J.\} and Jepsen, \{Peter Uhd\}",

year = "2011",

month = jul,

doi = "10.1007/s10762-011-9801-x",

language = "English",

volume = "32",

pages = "883--886",

journal = "Journal of Infrared, Millimeter, and Terahertz Waves",

issn = "1866-6892",

publisher = "Springer",

number = "7",

}

TY - JOUR

T1 - Effect of copper on the carrier lifetime in black silicon

AU - Porte, Henrik P.

AU - Turchinovich, Dmitry

AU - Persheyev, Saydulla

AU - Fan, Yongchang

AU - Rose, Mervyn J.

AU - Jepsen, Peter Uhd

PY - 2011/7

Y1 - 2011/7

N2 - Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.

AB - Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.

UR - https://www.scopus.com/pages/publications/80052583938

U2 - 10.1007/s10762-011-9801-x

DO - 10.1007/s10762-011-9801-x

M3 - Article

AN - SCOPUS:80052583938

SN - 1866-6892

VL - 32

SP - 883

EP - 886

JO - Journal of Infrared, Millimeter, and Terahertz Waves

JF - Journal of Infrared, Millimeter, and Terahertz Waves

IS - 7

ER -

Effect of copper on the carrier lifetime in black silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this