Effect of copper on the carrier lifetime in black silicon

Henrik P. Porte*, Dmitry Turchinovich, Saydulla Persheyev, Yongchang Fan, Mervyn J. Rose, Peter Uhd Jepsen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.

Original languageEnglish
Pages (from-to)883-886
Number of pages4
JournalJournal of Infrared, Millimeter, and Terahertz Waves
Volume32
Issue number7
DOIs
Publication statusPublished - Jul 2011

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