TY - JOUR
T1 - Effect of copper on the carrier lifetime in black silicon
AU - Porte, Henrik P.
AU - Turchinovich, Dmitry
AU - Persheyev, Saydulla
AU - Fan, Yongchang
AU - Rose, Mervyn J.
AU - Jepsen, Peter Uhd
PY - 2011/7
Y1 - 2011/7
N2 - Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.
AB - Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.
UR - http://www.scopus.com/inward/record.url?scp=80052583938&partnerID=8YFLogxK
U2 - 10.1007/s10762-011-9801-x
DO - 10.1007/s10762-011-9801-x
M3 - Article
AN - SCOPUS:80052583938
SN - 1866-6892
VL - 32
SP - 883
EP - 886
JO - Journal of Infrared, Millimeter, and Terahertz Waves
JF - Journal of Infrared, Millimeter, and Terahertz Waves
IS - 7
ER -