Dynamic vapour pressure measurements of di-tertiarybutyl sulphide using an ultrasonic monitor

LD Stockton, TL Ng, N Maung, IB Poole, JO Williams, AC Wright, DF Foster, David John Cole-Hamilton

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Di-tertiarybutyl sulphide is an attractive precursor for the growth, using metal-organic vapour-phase epitaxy (MOVPE), of sulphur-based wide band-gap II-VI compounds due to its lower volatility compared to other more commonly used sulphur sources and likely suppression of unwanted gas-phase pre-reactions. The vapour pressure of MOVPE precursors is a key parameter and needs to be precisely known in order to control the concentration of source materials entering the reactor. Only scattered and incomplete vapour pressure data exist for di-tertiarybutyl sulphide. The concentration under dynamic conditions was measured with an Epison concentration monitor and used to predict the saturated vapour pressures. The vapour pressure equation (log(10) p = 8.559(+/- 0.082) - (2335(+/- 23)/T) was obtained and the measured vapour pressures were found to be consistently smaller than the reported literature values. The saturated vapour pressure for tertiarybutyl thiol under dynamic conditions has also been measured and new data are reported.

Original languageEnglish
Pages (from-to)95-98
Number of pages4
JournalJournal of Crystal Growth
Volume183
Publication statusPublished - Jan 1998

Keywords

  • MOCVD
  • di-tertiarybutyl sulphide
  • vapour pressure
  • tertiarybutyl thiol
  • GROWTH
  • SULFIDE

Fingerprint

Dive into the research topics of 'Dynamic vapour pressure measurements of di-tertiarybutyl sulphide using an ultrasonic monitor'. Together they form a unique fingerprint.

Cite this