Dynamic SIMS characterization of interface structure of Ag/Alq3/NPB/ITO model devices

Z. Y. Yuan; W. Zhou; L. M. Peng

doi:10.1002/sia.1016

Dynamic SIMS characterization of interface structure of Ag/Alq₃/NPB/ITO model devices

Z. Y. Yuan, W. Zhou, L. M. Peng

School of Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we first profiled model organic light-emitting diodes (OLEDs) with the structure Ag/tris(8-hydroxyquinoline) aluminium (Alq₃)/N,N′-diphenyl-N,N′-bis[1-naphthyl -(1,1′-biphenyl]-4,4′- diamine (NPB)/indium tin oxide (ITO) using dynamic SIMS. The element distribution across the multilayer and the dynamic SIMS spectra at different regions were obtained. It was shown that dynamic SIMS is a powerful tool in profiling OLEDs. Clear diffusion of Ag into the Alq₃ layer was observed. The experimental results also revealed that a distinct interface for Alq₃/NPB can be obtained using dynamic SIMS.

Original language	English
Pages (from-to)	102-105
Number of pages	4
Journal	Surface and Interface Analysis
Volume	32
Issue number	1
DOIs	https://doi.org/10.1002/sia.1016
Publication status	Published - Aug 2001
Event	Asia-Pacific Surface and Interface Analysis Conference - Beijing, China Duration: 23 Oct 2000 → 26 Oct 2000

Keywords

Dynamic SIMS
Interface structure
OLEDs

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10.1002/sia.1016

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title = "Dynamic SIMS characterization of interface structure of Ag/Alq3/NPB/ITO model devices",

abstract = "In this study, we first profiled model organic light-emitting diodes (OLEDs) with the structure Ag/tris(8-hydroxyquinoline) aluminium (Alq3)/N,N′-diphenyl-N,N′-bis[1-naphthyl -(1,1′-biphenyl]-4,4′- diamine (NPB)/indium tin oxide (ITO) using dynamic SIMS. The element distribution across the multilayer and the dynamic SIMS spectra at different regions were obtained. It was shown that dynamic SIMS is a powerful tool in profiling OLEDs. Clear diffusion of Ag into the Alq3 layer was observed. The experimental results also revealed that a distinct interface for Alq3/NPB can be obtained using dynamic SIMS.",

keywords = "Dynamic SIMS, Interface structure, OLEDs",

author = "Yuan, {Z. Y.} and W. Zhou and Peng, {L. M.}",

year = "2001",

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language = "English",

volume = "32",

pages = "102--105",

journal = "Surface and Interface Analysis",

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publisher = "John Wiley & Sons, Ltd",

number = "1",

note = "Asia-Pacific Surface and Interface Analysis Conference ; Conference date: 23-10-2000 Through 26-10-2000",

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TY - JOUR

T1 - Dynamic SIMS characterization of interface structure of Ag/Alq3/NPB/ITO model devices

AU - Yuan, Z. Y.

AU - Zhou, W.

AU - Peng, L. M.

PY - 2001/8

Y1 - 2001/8

N2 - In this study, we first profiled model organic light-emitting diodes (OLEDs) with the structure Ag/tris(8-hydroxyquinoline) aluminium (Alq3)/N,N′-diphenyl-N,N′-bis[1-naphthyl -(1,1′-biphenyl]-4,4′- diamine (NPB)/indium tin oxide (ITO) using dynamic SIMS. The element distribution across the multilayer and the dynamic SIMS spectra at different regions were obtained. It was shown that dynamic SIMS is a powerful tool in profiling OLEDs. Clear diffusion of Ag into the Alq3 layer was observed. The experimental results also revealed that a distinct interface for Alq3/NPB can be obtained using dynamic SIMS.

AB - In this study, we first profiled model organic light-emitting diodes (OLEDs) with the structure Ag/tris(8-hydroxyquinoline) aluminium (Alq3)/N,N′-diphenyl-N,N′-bis[1-naphthyl -(1,1′-biphenyl]-4,4′- diamine (NPB)/indium tin oxide (ITO) using dynamic SIMS. The element distribution across the multilayer and the dynamic SIMS spectra at different regions were obtained. It was shown that dynamic SIMS is a powerful tool in profiling OLEDs. Clear diffusion of Ag into the Alq3 layer was observed. The experimental results also revealed that a distinct interface for Alq3/NPB can be obtained using dynamic SIMS.

KW - Dynamic SIMS

KW - Interface structure

KW - OLEDs

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AN - SCOPUS:0035420471

SN - 0142-2421

VL - 32

SP - 102

EP - 105

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 1

T2 - Asia-Pacific Surface and Interface Analysis Conference

Y2 - 23 October 2000 through 26 October 2000

ER -

Dynamic SIMS characterization of interface structure of Ag/Alq₃/NPB/ITO model devices

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Keywords

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