Double-sided junctions enable high-performance colloidal-quantum-dot photovoltaics

Mengxia Liu; F. Pelayo García De Arquer; Yiying Li; Xinzheng Lan; Gi Hwan Kim; Oleksandr Voznyy; Lethy Krishnan Jagadamma; Abdullah Saud Abbas; Sjoerd Hoogland; Zhenghong Lu; Jin Young Kim; Aram Amassian; Edward H. Sargent

doi:10.1002/adma.201506213

Double-sided junctions enable high-performance colloidal-quantum-dot photovoltaics

Mengxia Liu, F. Pelayo García De Arquer, Yiying Li, Xinzheng Lan, Gi Hwan Kim, Oleksandr Voznyy, Lethy Krishnan Jagadamma, Abdullah Saud Abbas, Sjoerd Hoogland, Zhenghong Lu, Jin Young Kim, Aram Amassian, Edward H. Sargent^*

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

A study is conducted to re-engineer the ZnO electrode to build a doublesided junction, one that includes not only a rectifying nCQD:pCQD junction in the quantum dot solid but also a strongly n+:n junction at the ZnO:nCQD interface. Researchers achieve this by incorporating In 3+ into ZnO, which allows them to simultaneously adjust its band structure and carrier concentration, ultimately benefiting colloidal quantum dots (CQDs) photovoltaic (PV) performance. The degenerately doped electrode forms a rectifying junction with the n-type CQD layer, and this increases the total depleted thickness within the CQD solid when the optimal doping density and electron affinity are achieved.

Original language	English
Pages (from-to)	4142-4148
Number of pages	7
Journal	Advanced Materials
Volume	28
Issue number	21
Early online date	1 Apr 2016
DOIs	https://doi.org/10.1002/adma.201506213
Publication status	Published - 1 Jun 2016

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Charge extraction
Colloidal quantum dots
In-doped ZnO
Solar cells

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10.1002/adma.201506213

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@article{ea054ab125c64f63b03adc169971f042,

title = "Double-sided junctions enable high-performance colloidal-quantum-dot photovoltaics",

abstract = "A study is conducted to re-engineer the ZnO electrode to build a doublesided junction, one that includes not only a rectifying nCQD:pCQD junction in the quantum dot solid but also a strongly n+:n junction at the ZnO:nCQD interface. Researchers achieve this by incorporating In 3+ into ZnO, which allows them to simultaneously adjust its band structure and carrier concentration, ultimately benefiting colloidal quantum dots (CQDs) photovoltaic (PV) performance. The degenerately doped electrode forms a rectifying junction with the n-type CQD layer, and this increases the total depleted thickness within the CQD solid when the optimal doping density and electron affinity are achieved.",

keywords = "Charge extraction, Colloidal quantum dots, In-doped ZnO, Solar cells",

author = "Mengxia Liu and \{De Arquer\}, \{F. Pelayo Garc{\'i}a\} and Yiying Li and Xinzheng Lan and Kim, \{Gi Hwan\} and Oleksandr Voznyy and Jagadamma, \{Lethy Krishnan\} and Abbas, \{Abdullah Saud\} and Sjoerd Hoogland and Zhenghong Lu and Kim, \{Jin Young\} and Aram Amassian and Sargent, \{Edward H.\}",

year = "2016",

month = jun,

day = "1",

doi = "10.1002/adma.201506213",

language = "English",

volume = "28",

pages = "4142--4148",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "21",

}

TY - JOUR

T1 - Double-sided junctions enable high-performance colloidal-quantum-dot photovoltaics

AU - Liu, Mengxia

AU - De Arquer, F. Pelayo García

AU - Li, Yiying

AU - Lan, Xinzheng

AU - Kim, Gi Hwan

AU - Voznyy, Oleksandr

AU - Jagadamma, Lethy Krishnan

AU - Abbas, Abdullah Saud

AU - Hoogland, Sjoerd

AU - Lu, Zhenghong

AU - Kim, Jin Young

AU - Amassian, Aram

AU - Sargent, Edward H.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - A study is conducted to re-engineer the ZnO electrode to build a doublesided junction, one that includes not only a rectifying nCQD:pCQD junction in the quantum dot solid but also a strongly n+:n junction at the ZnO:nCQD interface. Researchers achieve this by incorporating In 3+ into ZnO, which allows them to simultaneously adjust its band structure and carrier concentration, ultimately benefiting colloidal quantum dots (CQDs) photovoltaic (PV) performance. The degenerately doped electrode forms a rectifying junction with the n-type CQD layer, and this increases the total depleted thickness within the CQD solid when the optimal doping density and electron affinity are achieved.

AB - A study is conducted to re-engineer the ZnO electrode to build a doublesided junction, one that includes not only a rectifying nCQD:pCQD junction in the quantum dot solid but also a strongly n+:n junction at the ZnO:nCQD interface. Researchers achieve this by incorporating In 3+ into ZnO, which allows them to simultaneously adjust its band structure and carrier concentration, ultimately benefiting colloidal quantum dots (CQDs) photovoltaic (PV) performance. The degenerately doped electrode forms a rectifying junction with the n-type CQD layer, and this increases the total depleted thickness within the CQD solid when the optimal doping density and electron affinity are achieved.

KW - Charge extraction

KW - Colloidal quantum dots

KW - In-doped ZnO

KW - Solar cells

UR - https://www.scopus.com/pages/publications/84962674101

U2 - 10.1002/adma.201506213

DO - 10.1002/adma.201506213

M3 - Article

AN - SCOPUS:84962674101

SN - 0935-9648

VL - 28

SP - 4142

EP - 4148

JO - Advanced Materials

JF - Advanced Materials

IS - 21

ER -

Double-sided junctions enable high-performance colloidal-quantum-dot photovoltaics

Abstract

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Lethy Krishnan Jagadamma

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Double-sided junctions enable high-performance colloidal-quantum-dot photovoltaics

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