Double-sided junctions enable high-performance colloidal-quantum-dot photovoltaics

Mengxia Liu, F. Pelayo García De Arquer, Yiying Li, Xinzheng Lan, Gi Hwan Kim, Oleksandr Voznyy, Lethy Krishnan Jagadamma, Abdullah Saud Abbas, Sjoerd Hoogland, Zhenghong Lu, Jin Young Kim, Aram Amassian, Edward H. Sargent*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

120 Citations (Scopus)

Abstract

A study is conducted to re-engineer the ZnO electrode to build a doublesided junction, one that includes not only a rectifying nCQD:pCQD junction in the quantum dot solid but also a strongly n+:n junction at the ZnO:nCQD interface. Researchers achieve this by incorporating In 3+ into ZnO, which allows them to simultaneously adjust its band structure and carrier concentration, ultimately benefiting colloidal quantum dots (CQDs) photovoltaic (PV) performance. The degenerately doped electrode forms a rectifying junction with the n-type CQD layer, and this increases the total depleted thickness within the CQD solid when the optimal doping density and electron affinity are achieved.

Original languageEnglish
Pages (from-to)4142-4148
Number of pages7
JournalAdvanced Materials
Volume28
Issue number21
Early online date1 Apr 2016
DOIs
Publication statusPublished - 1 Jun 2016

Keywords

  • Charge extraction
  • Colloidal quantum dots
  • In-doped ZnO
  • Solar cells

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