Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

Christof P. Dietrich*, Martin Lange, Gabriele Benndorf, Holger von Wenckstern, Marius Grundmann

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The stoichiometry of pulsed-laser deposited, nominally undoped ZnO thin films can be controlled via oxygen partial pressure during growth. Samples grown under zinc-rich conditions at pressures below 0.02 mbar show the formation of a donor-acceptor pair recombination at 3.104 eV. Temperature- and excitation-dependent photoluminescence studies revealed structural defects, namely zinc interstitials and zinc vacancies, with donor and acceptor binding energies of E(D) = 40 meV and E(A) = 320 meV, respectively, to be accountable for this recombination. The findings were confirmed via calculations within the quantum defect model. (C) 2009 Elsevier Ltd. All rights reserved.

Original languageEnglish
Pages (from-to)379-382
Number of pages4
JournalSolid State Communications
Volume150
Issue number7-8
DOIs
Publication statusPublished - Feb 2010

Keywords

  • Thin films
  • Semiconductors
  • Optical properties
  • Luminescence
  • DEFECTS
  • GAN

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