Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

Christof P. Dietrich; Martin Lange; Gabriele Benndorf; Holger von Wenckstern; Marius Grundmann

doi:10.1016/j.ssc.2009.11.035

Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

Christof P. Dietrich^*, Martin Lange, Gabriele Benndorf, Holger von Wenckstern, Marius Grundmann

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

The stoichiometry of pulsed-laser deposited, nominally undoped ZnO thin films can be controlled via oxygen partial pressure during growth. Samples grown under zinc-rich conditions at pressures below 0.02 mbar show the formation of a donor-acceptor pair recombination at 3.104 eV. Temperature- and excitation-dependent photoluminescence studies revealed structural defects, namely zinc interstitials and zinc vacancies, with donor and acceptor binding energies of E(D) = 40 meV and E(A) = 320 meV, respectively, to be accountable for this recombination. The findings were confirmed via calculations within the quantum defect model. (C) 2009 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	379-382
Number of pages	4
Journal	Solid State Communications
Volume	150
Issue number	7-8
DOIs	https://doi.org/10.1016/j.ssc.2009.11.035
Publication status	Published - Feb 2010

Keywords

Thin films
Semiconductors
Optical properties
Luminescence
DEFECTS
GAN

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10.1016/j.ssc.2009.11.035

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@article{03e369cbb38448dd96e858f164120eb3,

title = "Donor-acceptor pair recombination in non-stoichiometric ZnO thin films",

abstract = "The stoichiometry of pulsed-laser deposited, nominally undoped ZnO thin films can be controlled via oxygen partial pressure during growth. Samples grown under zinc-rich conditions at pressures below 0.02 mbar show the formation of a donor-acceptor pair recombination at 3.104 eV. Temperature- and excitation-dependent photoluminescence studies revealed structural defects, namely zinc interstitials and zinc vacancies, with donor and acceptor binding energies of E(D) = 40 meV and E(A) = 320 meV, respectively, to be accountable for this recombination. The findings were confirmed via calculations within the quantum defect model. (C) 2009 Elsevier Ltd. All rights reserved.",

keywords = "Thin films, Semiconductors, Optical properties, Luminescence, DEFECTS, GAN",

author = "Dietrich, {Christof P.} and Martin Lange and Gabriele Benndorf and {von Wenckstern}, Holger and Marius Grundmann",

year = "2010",

month = feb,

doi = "10.1016/j.ssc.2009.11.035",

language = "English",

volume = "150",

pages = "379--382",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier",

number = "7-8",

}

TY - JOUR

T1 - Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

AU - Dietrich, Christof P.

AU - Lange, Martin

AU - Benndorf, Gabriele

AU - von Wenckstern, Holger

AU - Grundmann, Marius

PY - 2010/2

Y1 - 2010/2

N2 - The stoichiometry of pulsed-laser deposited, nominally undoped ZnO thin films can be controlled via oxygen partial pressure during growth. Samples grown under zinc-rich conditions at pressures below 0.02 mbar show the formation of a donor-acceptor pair recombination at 3.104 eV. Temperature- and excitation-dependent photoluminescence studies revealed structural defects, namely zinc interstitials and zinc vacancies, with donor and acceptor binding energies of E(D) = 40 meV and E(A) = 320 meV, respectively, to be accountable for this recombination. The findings were confirmed via calculations within the quantum defect model. (C) 2009 Elsevier Ltd. All rights reserved.

AB - The stoichiometry of pulsed-laser deposited, nominally undoped ZnO thin films can be controlled via oxygen partial pressure during growth. Samples grown under zinc-rich conditions at pressures below 0.02 mbar show the formation of a donor-acceptor pair recombination at 3.104 eV. Temperature- and excitation-dependent photoluminescence studies revealed structural defects, namely zinc interstitials and zinc vacancies, with donor and acceptor binding energies of E(D) = 40 meV and E(A) = 320 meV, respectively, to be accountable for this recombination. The findings were confirmed via calculations within the quantum defect model. (C) 2009 Elsevier Ltd. All rights reserved.

KW - Thin films

KW - Semiconductors

KW - Optical properties

KW - Luminescence

KW - DEFECTS

KW - GAN

U2 - 10.1016/j.ssc.2009.11.035

DO - 10.1016/j.ssc.2009.11.035

M3 - Article

SN - 0038-1098

VL - 150

SP - 379

EP - 382

JO - Solid State Communications

JF - Solid State Communications

IS - 7-8

ER -

Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

Abstract

Keywords

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