Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m

A. A. Lagatsky; V. E. Kisel; A. E. Troshin; N. A. Tolstik; N. V. Kuleshov; N. I. Leonyuk; A. E. Zhukov; E. U. Rafailov; W. Sibbett

doi:10.1364/OL.33.000083

Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m

A. A. Lagatsky, V. E. Kisel, A. E. Troshin, N. A. Tolstik, N. V. Kuleshov, N. I. Leonyuk, A. E. Zhukov, E. U. Rafailov, W. Sibbett

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)(4) laser operating in the 1.5-1.6 mu m spectral region. Low-loss GaInNAs quantumwell semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps. (c) 2007 Optical Society of America.

Original language	English
Pages (from-to)	83-85
Number of pages	3
Journal	Optics Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1364/OL.33.000083
Publication status	Published - 1 Jan 2008

Keywords

SEMICONDUCTOR SATURABLE ABSORBER
SOLID-STATE LASERS
GLASS-LASER
YB
CRYSTALS
MIRROR
GROWTH

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10.1364/OL.33.000083

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title = "Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m",

abstract = "We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)(4) laser operating in the 1.5-1.6 mu m spectral region. Low-loss GaInNAs quantumwell semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps. (c) 2007 Optical Society of America.",

keywords = "SEMICONDUCTOR SATURABLE ABSORBER, SOLID-STATE LASERS, GLASS-LASER, YB, CRYSTALS, MIRROR, GROWTH",

author = "Lagatsky, {A. A.} and Kisel, {V. E.} and Troshin, {A. E.} and Tolstik, {N. A.} and Kuleshov, {N. V.} and Leonyuk, {N. I.} and Zhukov, {A. E.} and Rafailov, {E. U.} and W. Sibbett",

year = "2008",

month = jan,

day = "1",

doi = "10.1364/OL.33.000083",

language = "English",

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AU - Lagatsky, A. A.

AU - Kisel, V. E.

AU - Troshin, A. E.

AU - Tolstik, N. A.

AU - Kuleshov, N. V.

AU - Leonyuk, N. I.

AU - Zhukov, A. E.

AU - Rafailov, E. U.

AU - Sibbett, W.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)(4) laser operating in the 1.5-1.6 mu m spectral region. Low-loss GaInNAs quantumwell semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps. (c) 2007 Optical Society of America.

AB - We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)(4) laser operating in the 1.5-1.6 mu m spectral region. Low-loss GaInNAs quantumwell semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps. (c) 2007 Optical Society of America.

KW - SEMICONDUCTOR SATURABLE ABSORBER

KW - SOLID-STATE LASERS

KW - GLASS-LASER

KW - YB

KW - CRYSTALS

KW - MIRROR

KW - GROWTH

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U2 - 10.1364/OL.33.000083

DO - 10.1364/OL.33.000083

M3 - Article

SN - 0146-9592

VL - 33

SP - 83

EP - 85

JO - Optics Letters

JF - Optics Letters

IS - 1

ER -

Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m

Abstract

Keywords

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Modular Ultrafast Sources EP/E06440X/1: Modular Ultrafast Sources

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Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m

Abstract

Keywords

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Modular Ultrafast Sources EP/E06440X/1: Modular Ultrafast Sources

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