Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and modelocked using low-temperature grown or ion implanted saturable-absorber mirrors

F Druon; GJ Valentine; S Chénais; P Raybaut; F Balembois; P Georges; A Brun; Alan John Kemp; DJL Birkin; Wilson Sibbett; S Mohr; D Kopf; D Burns; A Courjaud; C Hönninger; F Salin; R Gaumé; A Aron; G Aka; B Viana; C Clerc; H Bernas

doi:10.1051/epjap:2002089

Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and modelocked using low-temperature grown or ion implanted saturable-absorber mirrors

F Druon, GJ Valentine, S Chénais, P Raybaut, F Balembois, P Georges, A Brun, Alan John Kemp, DJL Birkin, Wilson Sibbett, S Mohr, D Kopf, D Burns, A Courjaud, C Hönninger, F Salin, R Gaumé, A Aron, G Aka, B VianaC Clerc, H Bernas

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)(3), Yb: Ca4GdO(BO3)(3) and Yb: Ca4YO(BO3)(3)) are demonstrated. Pulse duration as short as 69 fs has been obtained. To modelock such lasers, fast saturable absorbers need to be used. Two different types of fast saturable absorbers have been studied: low-temperature-grown semiconductor mirrors ( SESAM) and high-energy-ion-implanted semiconductor Bragg reflectors (SBR). We demonstrated, for the. first time to our knowledge, that ion-implanted SBR can be used to modelock oscillators using Yb-doped materials.

Original language	English
Pages (from-to)	177-182
Number of pages	6
Journal	The European Physical Journal - Applied Physics
Volume	20
Issue number	3
DOIs	https://doi.org/10.1051/epjap:2002089
Publication status	Published - Dec 2002

Keywords

PASSIVE-MODE-LOCKING
YB3+CA4GDO(BO3)(3) LASER
EFFICIENT

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10.1051/epjap:2002089

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Druon, F., Valentine, GJ., Chénais, S., Raybaut, P., Balembois, F., Georges, P., Brun, A., Kemp, A. J., Birkin, DJL., Sibbett, W., Mohr, S., Kopf, D., Burns, D., Courjaud, A., Hönninger, C., Salin, F., Gaumé, R., Aron, A., Aka, G., ... Bernas, H. (2002). Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and modelocked using low-temperature grown or ion implanted saturable-absorber mirrors. The European Physical Journal - Applied Physics, 20(3), 177-182. https://doi.org/10.1051/epjap:2002089

@article{f1ffa03333fc499cbede4808aafb9925,

title = "Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and modelocked using low-temperature grown or ion implanted saturable-absorber mirrors",

abstract = "Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)(3), Yb: Ca4GdO(BO3)(3) and Yb: Ca4YO(BO3)(3)) are demonstrated. Pulse duration as short as 69 fs has been obtained. To modelock such lasers, fast saturable absorbers need to be used. Two different types of fast saturable absorbers have been studied: low-temperature-grown semiconductor mirrors ( SESAM) and high-energy-ion-implanted semiconductor Bragg reflectors (SBR). We demonstrated, for the. first time to our knowledge, that ion-implanted SBR can be used to modelock oscillators using Yb-doped materials.",

keywords = "PASSIVE-MODE-LOCKING, YB3+CA4GDO(BO3)(3) LASER, EFFICIENT",

author = "F Druon and GJ Valentine and S Ch{\'e}nais and P Raybaut and F Balembois and P Georges and A Brun and Kemp, {Alan John} and DJL Birkin and Wilson Sibbett and S Mohr and D Kopf and D Burns and A Courjaud and C H{\"o}nninger and F Salin and R Gaum{\'e} and A Aron and G Aka and B Viana and C Clerc and H Bernas",

year = "2002",

month = dec,

doi = "10.1051/epjap:2002089",

language = "English",

volume = "20",

pages = "177--182",

journal = "The European Physical Journal - Applied Physics",

issn = "1286-0042",

publisher = "EDP Sciences",

number = "3",

}

Druon, F, Valentine, GJ, Chénais, S, Raybaut, P, Balembois, F, Georges, P, Brun, A, Kemp, AJ, Birkin, DJL, Sibbett, W, Mohr, S, Kopf, D, Burns, D, Courjaud, A, Hönninger, C, Salin, F, Gaumé, R, Aron, A, Aka, G, Viana, B, Clerc, C & Bernas, H 2002, 'Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and modelocked using low-temperature grown or ion implanted saturable-absorber mirrors', The European Physical Journal - Applied Physics, vol. 20, no. 3, pp. 177-182. https://doi.org/10.1051/epjap:2002089

TY - JOUR

T1 - Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and modelocked using low-temperature grown or ion implanted saturable-absorber mirrors

AU - Druon, F

AU - Valentine, GJ

AU - Chénais, S

AU - Raybaut, P

AU - Balembois, F

AU - Georges, P

AU - Brun, A

AU - Kemp, Alan John

AU - Birkin, DJL

AU - Sibbett, Wilson

AU - Mohr, S

AU - Kopf, D

AU - Burns, D

AU - Courjaud, A

AU - Hönninger, C

AU - Salin, F

AU - Gaumé, R

AU - Aron, A

AU - Aka, G

AU - Viana, B

AU - Clerc, C

AU - Bernas, H

PY - 2002/12

Y1 - 2002/12

N2 - Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)(3), Yb: Ca4GdO(BO3)(3) and Yb: Ca4YO(BO3)(3)) are demonstrated. Pulse duration as short as 69 fs has been obtained. To modelock such lasers, fast saturable absorbers need to be used. Two different types of fast saturable absorbers have been studied: low-temperature-grown semiconductor mirrors ( SESAM) and high-energy-ion-implanted semiconductor Bragg reflectors (SBR). We demonstrated, for the. first time to our knowledge, that ion-implanted SBR can be used to modelock oscillators using Yb-doped materials.

AB - Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)(3), Yb: Ca4GdO(BO3)(3) and Yb: Ca4YO(BO3)(3)) are demonstrated. Pulse duration as short as 69 fs has been obtained. To modelock such lasers, fast saturable absorbers need to be used. Two different types of fast saturable absorbers have been studied: low-temperature-grown semiconductor mirrors ( SESAM) and high-energy-ion-implanted semiconductor Bragg reflectors (SBR). We demonstrated, for the. first time to our knowledge, that ion-implanted SBR can be used to modelock oscillators using Yb-doped materials.

KW - PASSIVE-MODE-LOCKING

KW - YB3+CA4GDO(BO3)(3) LASER

KW - EFFICIENT

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U2 - 10.1051/epjap:2002089

DO - 10.1051/epjap:2002089

M3 - Article

SN - 1286-0042

VL - 20

SP - 177

EP - 182

JO - The European Physical Journal - Applied Physics

JF - The European Physical Journal - Applied Physics

IS - 3

ER -

Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and modelocked using low-temperature grown or ion implanted saturable-absorber mirrors

Abstract

Keywords

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