Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films

S. K. Persheyev; P. R. Drapacz; M. J. Rose; A. G. Fitzgerald

doi:10.1134/1.1682341

Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films

S. K. Persheyev^*, P. R. Drapacz, M. J. Rose, A. G. Fitzgerald

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10^-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface.

Original language	English
Pages (from-to)	344-346
Number of pages	3
Journal	Semiconductors
Volume	38
Issue number	3
DOIs	https://doi.org/10.1134/1.1682341
Publication status	Published - Mar 2004

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Access to Document

10.1134/1.1682341

Cite this

@article{0aaf57ce6032417cbb52407f3cd1584f,

title = "Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films",

abstract = "The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface.",

author = "Persheyev, \{S. K.\} and Drapacz, \{P. R.\} and Rose, \{M. J.\} and Fitzgerald, \{A. G.\}",

year = "2004",

month = mar,

doi = "10.1134/1.1682341",

language = "English",

volume = "38",

pages = "344--346",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "3",

}

TY - JOUR

T1 - Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films

AU - Persheyev, S. K.

AU - Drapacz, P. R.

AU - Rose, M. J.

AU - Fitzgerald, A. G.

PY - 2004/3

Y1 - 2004/3

N2 - The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface.

AB - The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface.

UR - https://www.scopus.com/pages/publications/1842737546

U2 - 10.1134/1.1682341

DO - 10.1134/1.1682341

M3 - Article

AN - SCOPUS:1842737546

SN - 1063-7826

VL - 38

SP - 344

EP - 346

JO - Semiconductors

JF - Semiconductors

IS - 3

ER -

Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this