Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films

S. K. Persheyev*, P. R. Drapacz, M. J. Rose, A. G. Fitzgerald

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface.

Original languageEnglish
Pages (from-to)344-346
Number of pages3
JournalSemiconductors
Volume38
Issue number3
DOIs
Publication statusPublished - Mar 2004

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