Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films

S. K. Persheyev; P. R. Drapacz; M. J. Rose; A. G. Fitzgerald

doi:10.1134/1.1682341

Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films

S. K. Persheyev^*, P. R. Drapacz, M. J. Rose, A. G. Fitzgerald

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10^-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface.

Original language	English
Pages (from-to)	344-346
Number of pages	3
Journal	Semiconductors
Volume	38
Issue number	3
DOIs	https://doi.org/10.1134/1.1682341
Publication status	Published - Mar 2004

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title = "Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films",

abstract = "The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface.",

author = "Persheyev, {S. K.} and Drapacz, {P. R.} and Rose, {M. J.} and Fitzgerald, {A. G.}",

year = "2004",

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AU - Persheyev, S. K.

AU - Drapacz, P. R.

AU - Rose, M. J.

AU - Fitzgerald, A. G.

PY - 2004/3

Y1 - 2004/3

N2 - The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface.

AB - The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface.

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U2 - 10.1134/1.1682341

DO - 10.1134/1.1682341

M3 - Article

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SP - 344

EP - 346

JO - Semiconductors

JF - Semiconductors

IS - 3

ER -

Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films

Abstract

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