Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

P. D. C. King; T. D. Veal; P. H. Jefferson; S. A. Hatfield; L. F. J. Piper; C. F. McConville; F. Fuchs; J. Furthmueller; F. Bechstedt; Hai Lu; W. J. Schaff

doi:10.1103/PhysRevB.77.045316

Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

P. D. C. King, T. D. Veal, P. H. Jefferson, S. A. Hatfield, L. F. J. Piper, C. F. McConville, F. Fuchs, J. Furthmueller, F. Bechstedt, Hai Lu, W. J. Schaff

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Abstract

Bulk and surface electronic properties of Si-doped InN are investigated using high-resolution x-ray photoemission spectroscopy, optical absorption spectroscopy, and quasiparticle corrected density functional theory calculations. The branch point energy in InN is experimentally determined to lie 1.83 +/- 0.10 eV above the valence-band maximum. This high position relative to the band edges is used to explain the extreme fundamental electronic properties of the material. Far from being anomalous, these properties are reconciled within chemical trends of common-cation and common-anion semiconductors.

Original language	English
Pages (from-to)	045316
Number of pages	6
Journal	Physical Review. B, Condensed matter and materials physics
Volume	77
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.77.045316
Publication status	Published - Jan 2008

Keywords

BAND OFFSETS
INDIUM NITRIDE
GAP
ACCUMULATION
INTERFACE
SURFACES
STATES

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10.1103/PhysRevB.77.045316

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King, P. D. C., Veal, T. D., Jefferson, P. H., Hatfield, S. A., Piper, L. F. J., McConville, C. F., Fuchs, F., Furthmueller, J., Bechstedt, F., Lu, H., & Schaff, W. J. (2008). Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors. Physical Review. B, Condensed matter and materials physics, 77(4), 045316. https://doi.org/10.1103/PhysRevB.77.045316

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title = "Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors",

abstract = "Bulk and surface electronic properties of Si-doped InN are investigated using high-resolution x-ray photoemission spectroscopy, optical absorption spectroscopy, and quasiparticle corrected density functional theory calculations. The branch point energy in InN is experimentally determined to lie 1.83 +/- 0.10 eV above the valence-band maximum. This high position relative to the band edges is used to explain the extreme fundamental electronic properties of the material. Far from being anomalous, these properties are reconciled within chemical trends of common-cation and common-anion semiconductors.",

keywords = "BAND OFFSETS, INDIUM NITRIDE, GAP, ACCUMULATION, INTERFACE, SURFACES, STATES",

author = "King, \{P. D. C.\} and Veal, \{T. D.\} and Jefferson, \{P. H.\} and Hatfield, \{S. A.\} and Piper, \{L. F. J.\} and McConville, \{C. F.\} and F. Fuchs and J. Furthmueller and F. Bechstedt and Hai Lu and Schaff, \{W. J.\}",

year = "2008",

month = jan,

doi = "10.1103/PhysRevB.77.045316",

language = "English",

volume = "77",

pages = "045316",

journal = "Physical Review. B, Condensed matter and materials physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

}

King, PDC, Veal, TD, Jefferson, PH, Hatfield, SA, Piper, LFJ, McConville, CF, Fuchs, F, Furthmueller, J, Bechstedt, F, Lu, H & Schaff, WJ 2008, 'Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors', Physical Review. B, Condensed matter and materials physics, vol. 77, no. 4, pp. 045316. https://doi.org/10.1103/PhysRevB.77.045316

TY - JOUR

T1 - Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

AU - King, P. D. C.

AU - Veal, T. D.

AU - Jefferson, P. H.

AU - Hatfield, S. A.

AU - Piper, L. F. J.

AU - McConville, C. F.

AU - Fuchs, F.

AU - Furthmueller, J.

AU - Bechstedt, F.

AU - Lu, Hai

AU - Schaff, W. J.

PY - 2008/1

Y1 - 2008/1

N2 - Bulk and surface electronic properties of Si-doped InN are investigated using high-resolution x-ray photoemission spectroscopy, optical absorption spectroscopy, and quasiparticle corrected density functional theory calculations. The branch point energy in InN is experimentally determined to lie 1.83 +/- 0.10 eV above the valence-band maximum. This high position relative to the band edges is used to explain the extreme fundamental electronic properties of the material. Far from being anomalous, these properties are reconciled within chemical trends of common-cation and common-anion semiconductors.

AB - Bulk and surface electronic properties of Si-doped InN are investigated using high-resolution x-ray photoemission spectroscopy, optical absorption spectroscopy, and quasiparticle corrected density functional theory calculations. The branch point energy in InN is experimentally determined to lie 1.83 +/- 0.10 eV above the valence-band maximum. This high position relative to the band edges is used to explain the extreme fundamental electronic properties of the material. Far from being anomalous, these properties are reconciled within chemical trends of common-cation and common-anion semiconductors.

KW - BAND OFFSETS

KW - INDIUM NITRIDE

KW - GAP

KW - ACCUMULATION

KW - INTERFACE

KW - SURFACES

KW - STATES

UR - https://www.scopus.com/pages/publications/38349089635

U2 - 10.1103/PhysRevB.77.045316

DO - 10.1103/PhysRevB.77.045316

M3 - Article

SN - 1098-0121

VL - 77

SP - 045316

JO - Physical Review. B, Condensed matter and materials physics

JF - Physical Review. B, Condensed matter and materials physics

IS - 4

ER -

Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

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