Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

P. D. C. King, T. D. Veal, P. H. Jefferson, S. A. Hatfield, L. F. J. Piper, C. F. McConville, F. Fuchs, J. Furthmueller, F. Bechstedt, Hai Lu, W. J. Schaff

Research output: Contribution to journalArticlepeer-review

100 Citations (Scopus)

Abstract

Bulk and surface electronic properties of Si-doped InN are investigated using high-resolution x-ray photoemission spectroscopy, optical absorption spectroscopy, and quasiparticle corrected density functional theory calculations. The branch point energy in InN is experimentally determined to lie 1.83 +/- 0.10 eV above the valence-band maximum. This high position relative to the band edges is used to explain the extreme fundamental electronic properties of the material. Far from being anomalous, these properties are reconciled within chemical trends of common-cation and common-anion semiconductors.

Original languageEnglish
Pages (from-to)045316
Number of pages6
JournalPhysical Review. B, Condensed matter and materials physics
Volume77
Issue number4
DOIs
Publication statusPublished - Jan 2008

Keywords

  • BAND OFFSETS
  • INDIUM NITRIDE
  • GAP
  • ACCUMULATION
  • INTERFACE
  • SURFACES
  • STATES

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