Determination of operating parameters for a GaAs-based polariton laser

J. Schmutzler; F. Veit; M. Assmann; J. -S. Tempel; Sven Höfling; M. Kamp; A. Forchel; M. Bayer

doi:10.1063/1.4794144

Determination of operating parameters for a GaAs-based polariton laser

J. Schmutzler^*, F. Veit, M. Assmann, J. -S. Tempel, Sven Höfling, M. Kamp, A. Forchel, M. Bayer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report on a systematic study of the phase transitions to polariton condensation (PC) and further to cavity lasing in a GaAs-based microcavity with respect to exciton-cavity detuning and lattice temperature. Using far field and time-resolved spectroscopy, we determined the parameter space in which PC can be achieved and the corresponding variation of PC threshold power. We found a lower bound of -12 meV for the exciton-cavity detuning and an upper bound of 90 K for the lattice temperature.

Original language	English
Article number	081115
Number of pages	5
Journal	Applied Physics Letters
Volume	102
Issue number	8
DOIs	https://doi.org/10.1063/1.4794144
Publication status	Published - 25 Feb 2013

Keywords

Bose-Einstein condensation
Photonic crystals
Excitation energies
Polaritons
Optical microcavities

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10.1063/1.4794144

ApplPhyLett2013
Copyright 2013, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 102, Issue 8 and may be found at: http://scitation.aip.org/content/aip/journal/apl/102/8/10.1063/1.4794144
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title = "Determination of operating parameters for a GaAs-based polariton laser",

abstract = "We report on a systematic study of the phase transitions to polariton condensation (PC) and further to cavity lasing in a GaAs-based microcavity with respect to exciton-cavity detuning and lattice temperature. Using far field and time-resolved spectroscopy, we determined the parameter space in which PC can be achieved and the corresponding variation of PC threshold power. We found a lower bound of -12 meV for the exciton-cavity detuning and an upper bound of 90 K for the lattice temperature.",

keywords = "Bose-Einstein condensation, Photonic crystals, Excitation energies, Polaritons, Optical microcavities",

author = "J. Schmutzler and F. Veit and M. Assmann and Tempel, {J. -S.} and Sven H{\"o}fling and M. Kamp and A. Forchel and M. Bayer",

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T1 - Determination of operating parameters for a GaAs-based polariton laser

AU - Schmutzler, J.

AU - Veit, F.

AU - Assmann, M.

AU - Tempel, J. -S.

AU - Höfling, Sven

AU - Kamp, M.

AU - Forchel, A.

AU - Bayer, M.

PY - 2013/2/25

Y1 - 2013/2/25

N2 - We report on a systematic study of the phase transitions to polariton condensation (PC) and further to cavity lasing in a GaAs-based microcavity with respect to exciton-cavity detuning and lattice temperature. Using far field and time-resolved spectroscopy, we determined the parameter space in which PC can be achieved and the corresponding variation of PC threshold power. We found a lower bound of -12 meV for the exciton-cavity detuning and an upper bound of 90 K for the lattice temperature.

AB - We report on a systematic study of the phase transitions to polariton condensation (PC) and further to cavity lasing in a GaAs-based microcavity with respect to exciton-cavity detuning and lattice temperature. Using far field and time-resolved spectroscopy, we determined the parameter space in which PC can be achieved and the corresponding variation of PC threshold power. We found a lower bound of -12 meV for the exciton-cavity detuning and an upper bound of 90 K for the lattice temperature.

KW - Bose-Einstein condensation

KW - Photonic crystals

KW - Excitation energies

KW - Polaritons

KW - Optical microcavities

U2 - 10.1063/1.4794144

DO - 10.1063/1.4794144

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081115

ER -

Determination of operating parameters for a GaAs-based polariton laser

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Keywords

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