Design and fabrication of a copper test structure for use as an electrical critical dimension reference

B. J.R. Shulver; A. S. Bunting; A. M. Gundlach; L. I. Haworth; A. W.S. Ross; A. J. Snell; J. T.M. Stevenson; A. J. Walton; R. A. Allen; M. W. Cresswell

doi:10.1109/ICMTS.2006.1614288

Design and fabrication of a copper test structure for use as an electrical critical dimension reference

B. J.R. Shulver^*, A. S. Bunting, A. M. Gundlach, L. I. Haworth, A. W.S. Ross, A. J. Snell, J. T.M. Stevenson, A. J. Walton, R. A. Allen, M. W. Cresswell

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel copper damascene process is reported for fabrication of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial "silicon preform" whose linewidth is transferred into a trench using a silicon nitride mould. The trench is created by removing a portion of the silicon and replacing it with copper to enable both Transmission Electron Microscopy (TEM) and electrical linewidth measurements to be made on the same structure. The technique is based on the use of anisotropic wet etching of (110) silicon wafers to yield silicon features with vertical sidewalls. The paper demonstrates that this method successfully produces copper lines which serve as ECD control structures and the process can be applied to any damascene compatible material for developing electrical linewidth measurement reference material.

Original language	English
Title of host publication	2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers
Pages	124-129
Number of pages	6
Volume	2006
DOIs	https://doi.org/10.1109/ICMTS.2006.1614288
Publication status	Published - 13 Oct 2006
Event	2006 International Conference on Microelectronic Test Structures - Austin, TX, United States Duration: 6 Mar 2006 → 9 Mar 2006

Conference

Conference	2006 International Conference on Microelectronic Test Structures
Country/Territory	United States
City	Austin, TX
Period	6/03/06 → 9/03/06

Access to Document

10.1109/ICMTS.2006.1614288

Cite this

Shulver, B. J. R., Bunting, A. S., Gundlach, A. M., Haworth, L. I., Ross, A. W. S., Snell, A. J., Stevenson, J. T. M., Walton, A. J., Allen, R. A., & Cresswell, M. W. (2006). Design and fabrication of a copper test structure for use as an electrical critical dimension reference. In 2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers (Vol. 2006, pp. 124-129). Article 1614288 https://doi.org/10.1109/ICMTS.2006.1614288

@inproceedings{5412673d57af46b3890fcba6966f1d07,

title = "Design and fabrication of a copper test structure for use as an electrical critical dimension reference",

abstract = "A novel copper damascene process is reported for fabrication of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial {"}silicon preform{"} whose linewidth is transferred into a trench using a silicon nitride mould. The trench is created by removing a portion of the silicon and replacing it with copper to enable both Transmission Electron Microscopy (TEM) and electrical linewidth measurements to be made on the same structure. The technique is based on the use of anisotropic wet etching of (110) silicon wafers to yield silicon features with vertical sidewalls. The paper demonstrates that this method successfully produces copper lines which serve as ECD control structures and the process can be applied to any damascene compatible material for developing electrical linewidth measurement reference material.",

author = "Shulver, {B. J.R.} and Bunting, {A. S.} and Gundlach, {A. M.} and Haworth, {L. I.} and Ross, {A. W.S.} and Snell, {A. J.} and Stevenson, {J. T.M.} and Walton, {A. J.} and Allen, {R. A.} and Cresswell, {M. W.}",

year = "2006",

month = oct,

day = "13",

doi = "10.1109/ICMTS.2006.1614288",

language = "English",

isbn = "1424401674",

volume = "2006",

pages = "124--129",

booktitle = "2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers",

note = "2006 International Conference on Microelectronic Test Structures ; Conference date: 06-03-2006 Through 09-03-2006",

}

Shulver, BJR, Bunting, AS, Gundlach, AM, Haworth, LI, Ross, AWS, Snell, AJ, Stevenson, JTM, Walton, AJ, Allen, RA & Cresswell, MW 2006, Design and fabrication of a copper test structure for use as an electrical critical dimension reference. in 2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers. vol. 2006, 1614288, pp. 124-129, 2006 International Conference on Microelectronic Test Structures, Austin, TX, United States, 6/03/06. https://doi.org/10.1109/ICMTS.2006.1614288

Design and fabrication of a copper test structure for use as an electrical critical dimension reference. / Shulver, B. J.R.; Bunting, A. S.; Gundlach, A. M. et al.
2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers. Vol. 2006 2006. p. 124-129 1614288.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Design and fabrication of a copper test structure for use as an electrical critical dimension reference

AU - Shulver, B. J.R.

AU - Bunting, A. S.

AU - Gundlach, A. M.

AU - Haworth, L. I.

AU - Ross, A. W.S.

AU - Snell, A. J.

AU - Stevenson, J. T.M.

AU - Walton, A. J.

AU - Allen, R. A.

AU - Cresswell, M. W.

PY - 2006/10/13

Y1 - 2006/10/13

N2 - A novel copper damascene process is reported for fabrication of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial "silicon preform" whose linewidth is transferred into a trench using a silicon nitride mould. The trench is created by removing a portion of the silicon and replacing it with copper to enable both Transmission Electron Microscopy (TEM) and electrical linewidth measurements to be made on the same structure. The technique is based on the use of anisotropic wet etching of (110) silicon wafers to yield silicon features with vertical sidewalls. The paper demonstrates that this method successfully produces copper lines which serve as ECD control structures and the process can be applied to any damascene compatible material for developing electrical linewidth measurement reference material.

AB - A novel copper damascene process is reported for fabrication of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial "silicon preform" whose linewidth is transferred into a trench using a silicon nitride mould. The trench is created by removing a portion of the silicon and replacing it with copper to enable both Transmission Electron Microscopy (TEM) and electrical linewidth measurements to be made on the same structure. The technique is based on the use of anisotropic wet etching of (110) silicon wafers to yield silicon features with vertical sidewalls. The paper demonstrates that this method successfully produces copper lines which serve as ECD control structures and the process can be applied to any damascene compatible material for developing electrical linewidth measurement reference material.

UR - http://www.scopus.com/inward/record.url?scp=33749510718&partnerID=8YFLogxK

U2 - 10.1109/ICMTS.2006.1614288

DO - 10.1109/ICMTS.2006.1614288

M3 - Conference contribution

AN - SCOPUS:33749510718

SN - 1424401674

SN - 9781424401673

VL - 2006

SP - 124

EP - 129

BT - 2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers

T2 - 2006 International Conference on Microelectronic Test Structures

Y2 - 6 March 2006 through 9 March 2006

ER -

Design and fabrication of a copper test structure for use as an electrical critical dimension reference

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this