Deposition of MSe (M = Cd, Zn) films by LP-MOCVD from novel single-source precursors M[(SePPh2)2N]2

Mohammad Afzaal; Stephen M. Aucott; David Crouch; Paul O'Brien; J. Derek Woollins; Jin Ho Park

doi:10.1002/1521-3862(20020903)8:5<187::AID-CVDE187>3.0.CO;2-5

Deposition of MSe (M = Cd, Zn) films by LP-MOCVD from novel single-source precursors M[(SePPh₂)₂N]₂

Mohammad Afzaal, Stephen M. Aucott, David Crouch, Paul O'Brien^*, J. Derek Woollins, Jin Ho Park

^*Corresponding author for this work

School of Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

The deposition of MSe (M= Cd, Zn) films by low pressure chemical vapor deposition from air stable single-source precursors, was analyzed. The thermogravimetric analysis of cadmium and zinc showed that the precursors were volatile and began to evaporate at 375°C. It was found using gas chromatography and mass spectrometry experiments that the use of methyl(n-hexyl) derivatives instead of symmetric alkyl hindered the formation of diethyldiselenide. The observed color of Zinc selenide films produced at 525°C was dark orange and the film was transparent.

Original language	English
Pages (from-to)	187-189
Number of pages	3
Journal	Chemical Vapor Deposition
Volume	8
Issue number	5
DOIs	https://doi.org/10.1002/1521-3862(20020903)8:5<187::AID-CVDE187>3.0.CO;2-5
Publication status	Published - 1 Sept 2002

Access to Document

10.1002/1521-3862(20020903)8:5<187::AID-CVDE187>3.0.CO;2-5

Cite this

@article{0484109e609d425691484bce3dec9a84,

title = "Deposition of MSe (M = Cd, Zn) films by LP-MOCVD from novel single-source precursors M[(SePPh2)2N]2",

abstract = "The deposition of MSe (M= Cd, Zn) films by low pressure chemical vapor deposition from air stable single-source precursors, was analyzed. The thermogravimetric analysis of cadmium and zinc showed that the precursors were volatile and began to evaporate at 375°C. It was found using gas chromatography and mass spectrometry experiments that the use of methyl(n-hexyl) derivatives instead of symmetric alkyl hindered the formation of diethyldiselenide. The observed color of Zinc selenide films produced at 525°C was dark orange and the film was transparent.",

author = "Mohammad Afzaal and Aucott, \{Stephen M.\} and David Crouch and Paul O'Brien and Woollins, \{J. Derek\} and Park, \{Jin Ho\}",

year = "2002",

month = sep,

day = "1",

doi = "10.1002/1521-3862(20020903)8:5<187::AID-CVDE187>3.0.CO;2-5",

language = "English",

volume = "8",

pages = "187--189",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley-VCH, Weinheim",

number = "5",

}

TY - JOUR

T1 - Deposition of MSe (M = Cd, Zn) films by LP-MOCVD from novel single-source precursors M[(SePPh2)2N]2

AU - Afzaal, Mohammad

AU - Aucott, Stephen M.

AU - Crouch, David

AU - O'Brien, Paul

AU - Woollins, J. Derek

AU - Park, Jin Ho

PY - 2002/9/1

Y1 - 2002/9/1

N2 - The deposition of MSe (M= Cd, Zn) films by low pressure chemical vapor deposition from air stable single-source precursors, was analyzed. The thermogravimetric analysis of cadmium and zinc showed that the precursors were volatile and began to evaporate at 375°C. It was found using gas chromatography and mass spectrometry experiments that the use of methyl(n-hexyl) derivatives instead of symmetric alkyl hindered the formation of diethyldiselenide. The observed color of Zinc selenide films produced at 525°C was dark orange and the film was transparent.

AB - The deposition of MSe (M= Cd, Zn) films by low pressure chemical vapor deposition from air stable single-source precursors, was analyzed. The thermogravimetric analysis of cadmium and zinc showed that the precursors were volatile and began to evaporate at 375°C. It was found using gas chromatography and mass spectrometry experiments that the use of methyl(n-hexyl) derivatives instead of symmetric alkyl hindered the formation of diethyldiselenide. The observed color of Zinc selenide films produced at 525°C was dark orange and the film was transparent.

UR - https://www.scopus.com/pages/publications/0037684953

U2 - 10.1002/1521-3862(20020903)8:5<187::AID-CVDE187>3.0.CO;2-5

DO - 10.1002/1521-3862(20020903)8:5<187::AID-CVDE187>3.0.CO;2-5

M3 - Article

AN - SCOPUS:0037684953

SN - 0948-1907

VL - 8

SP - 187

EP - 189

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

IS - 5

ER -

Deposition of MSe (M = Cd, Zn) films by LP-MOCVD from novel single-source precursors M[(SePPh₂)₂N]₂

Abstract

Access to Document

Other files and links

Fingerprint

Cite this